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    STB4NB50 Search Results

    STB4NB50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB4NB50 STMicroelectronics N - CHANNEL 500V - 2.5 ? - 3.8A - D2PAK-I2PAK PowerMESH MOSFET Original PDF
    STB4NB50-1 STMicroelectronics N-Channel 500 V - 2.5 ohm - 3.8 A - I2PAK PowerMESH MOSFET Original PDF
    STB4NB50T4 STMicroelectronics N-Channel 500 V - 2.5 ohm - 3.8 A - D2PAK PowerMESH MOSFET Original PDF

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    STB4NB50

    Abstract: 0053D
    Text: STB4NB50 N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STB4NB50 500 V < 2.8 Ω 3.8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STB4NB50 STB4NB50 0053D

    b4nb50

    Abstract: STB4NB50
    Text: STB4NB50  N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST B4NB50 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 2.8 Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STB4NB50 B4NB50 b4nb50 STB4NB50

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    Untitled

    Abstract: No abstract text available
    Text: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    OCR Scan     		PDF STB4NB50 swi10