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    STB6 Price and Stock

    STMicroelectronics STB6N60M2

    MOSFET N-CH 600V 4.5A D2PAK
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    DigiKey STB6N60M2 Reel 10,000 1,000
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    Avnet Americas STB6N60M2 Reel 16 Weeks 2,000
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    Arrow Electronics STB6N60M2 Cut Strips 47 16 Weeks 1
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    Newark STB6N60M2 Cut Tape 1,059 1
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    STMicroelectronics STB6N60M2 1
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    Avnet Silica STB6N60M2 17 Weeks 1,000
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    Chip One Stop STB6N60M2 Cut Tape 1,970
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    EBV Elektronik STB6N60M2 17 Weeks 1,000
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    Lite-On Semiconductor Corporation LTST-B680VSKT

    LED YELLOW CLEAR 2SMD
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    DigiKey LTST-B680VSKT Cut Tape 7,900 1
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    LTST-B680VSKT Digi-Reel 7,900 1
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    Avnet Americas LTST-B680VSKT Reel 18 Weeks 8,000
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    Mouser Electronics LTST-B680VSKT 8,351
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    TME LTST-B680VSKT 7,200 5
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    onsemi NSTB60BDW1T1G

    TRANS PREBIAS 1NPN 1PNP 50V SC88
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    DigiKey NSTB60BDW1T1G Cut Tape 6,260 1
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    NSTB60BDW1T1G Digi-Reel 6,260 1
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    NSTB60BDW1T1G Reel 3,000 3,000
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    Avnet Americas NSTB60BDW1T1G Reel 10 Weeks 24,000
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    Mouser Electronics NSTB60BDW1T1G 6,740
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    Newark NSTB60BDW1T1G Reel 9,000
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    Rochester Electronics NSTB60BDW1T1G 5,960 1
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    Avnet Silica NSTB60BDW1T1G 11 Weeks 3,000
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    Flip Electronics NSTB60BDW1T1G 20,800
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    SMC Diode Solutions STB60100C

    DIODE ARRAY SCHOTTKY 100V D2PAK
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    DigiKey STB60100C Digi-Reel 4,773 1
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    STB60100C Cut Tape 4,773 1
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    STB60100C Reel 4,000 800
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    PanJit Group BAV99STB6_R1_00001

    DIODE ARRAY GP 75V 150MA SOT-563
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    DigiKey BAV99STB6_R1_00001 Cut Tape 3,875 1
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    BAV99STB6_R1_00001 Digi-Reel 3,875 1
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    Find more STB6 price and stock on Findchips.com

    STB6 Datasheets (235)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB6 Weidmüller Small sheet steel enclosures Original PDF
    STB6000 STMicroelectronics QPSK DVB/DIRECTVTM DIRECT CONVERSION TUNER IC STB6000 Original PDF
    STB6010 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6010 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB60100CTR SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 100V D2PAK Original PDF
    STB6011 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6012 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6013 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6015 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6015 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6016 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6016 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6018 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6020 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6022 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6024 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6027 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6027 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6030 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6033 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    ...

    STB6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b01619

    Abstract: D6NM60N
    Text: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N


    Original     		STx6NM60N O-220, O-220FP, STB6NM60N STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N O-220 b01619 D6NM60N PDF

    STB60NE06L-16

    Abstract: No abstract text available
    Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		STB60NE06L-16 O-263) STB60NE06L-16 PDF

    stp6nc60fp

    Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
    Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		STP6NC60 STP6NC60FP STB6NC60-1 O-220/TO-220FP/I2PAK 6NC60 O-220 O-220FP stp6nc60fp stp6nc60fp equivalent STB6NC60-1 PDF

    STB60NF03L

    Abstract: No abstract text available
    Text: STB60NF03L N-CHANNEL 30V - 0.008Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF03L • ■ VDSS RDS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		STB60NF03L STB60NF03L PDF

    STB6NA80

    Abstract: No abstract text available
    Text: STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA80 800 V < 1.9 Ω 5.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STB6NA80 100oC O-262) O-263) STB6NA80 PDF

    b60nf06

    Abstract: B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368
    Text: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB60NF06 STB60NF06-1 b60nf06 B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368 PDF

    STB6LNC60

    Abstract: No abstract text available
    Text: STB6LNC60 N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB6LNC60 600 V < 1.25 Ω 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		STB6LNC60 STB6LNC60 PDF

    B60NE06L

    Abstract: B60NE06L-16 b60ne
    Text: STB60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY


    Original     		STB60NE06L-16 B60NE06L-16 175oC O-263 B60NE06L B60NE06L-16 b60ne PDF

    STB6000

    Abstract: stv0299 application STV0299 QFN-32 bpsk QFN32Pin ST omega
    Text: STB6000 QPSK DVB/DIRECTVTM direct conversion tuner IC DATA BRIEF Description satellite front end that can seamlessly interface to ST’s OMEGA range of set-top box decoders. Packaged in a small QFN 32-pin package, it is ideal for low cost DBS design. The STB6000 ASIC is a highly integrated, low


    Original     		STB6000 32-pin STB6000 stv0299 application STV0299 QFN-32 bpsk QFN32Pin ST omega PDF

    STB6NB50

    Abstract: DSASW003744 58AR
    Text: STB6NB50 N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK PowerMESH MOSFET TYPE V DSS R DS on ID STB6NB50 500 V < 1.5 Ω 5.8 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		STB6NB50 O-262or STB6NB50 DSASW003744 58AR PDF

    STB60NE06L-16

    Abstract: No abstract text available
    Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		STB60NE06L-16 O-263) STB60NE06L-16 PDF

    STB60NE03L-12

    Abstract: No abstract text available
    Text: STB60NE03L-12 N-CHANNEL 30V - 0.009 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STB60NE03L-12 30 V <0.012 Ω 60 A TYPICAL RDS(on) = 0.009 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STB60NE03L-12 STB60NE03L-12 PDF

    6NC60

    Abstract: STP6NC60 welding smps schematic N-Channel mosfet 600v 36A stp6nc60fp equivalent STB6NC60-1 STP6NC60FP
    Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		STP6NC60 STP6NC60FP STB6NC60-1 O-220/TO-220FP/I2PAK 6NC60 O-220 O-220FP welding smps schematic N-Channel mosfet 600v 36A stp6nc60fp equivalent STB6NC60-1 STP6NC60FP PDF

    STB6NA60

    Abstract: No abstract text available
    Text: STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA60 600 V < 1.2 Ω 6.5 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STB6NA60 100oC O-262) O-263) STB6NA60 PDF

    b60ne

    Abstract: B60NE06L STB60NE06L-16T4 B60NE06
    Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		STB60NE06L-16 STB60NE06L-16T4erein b60ne B60NE06L STB60NE06L-16T4 B60NE06 PDF

    p6nk90zfp

    Abstract: p6nk90z p6nk90 B6NK90Z STP6NK90ZFP p6nk90zf b6nk90 p6nk STP6NK90Z B6NK9
    Text: STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z • ■ ■ ■ ■ ■ V DSS R DS on ID Pw 900 V 900 V 900 V <2Ω <2Ω <2Ω 5.8 A 5.8 A


    Original     		STP6NK90Z STP6NK90ZFP STB6NK90Z O-220/TO-220FP/D2PAK O-220 O-220FP p6nk90zfp p6nk90z p6nk90 B6NK90Z p6nk90zf b6nk90 p6nk B6NK9 PDF

    STP6NC60

    Abstract: No abstract text available
    Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		O-220/TO-220FP/I2PAK 6NC60 STP6NC60FP STP6NC60 STP6NC60FP STB6NC60-1 O-220 O-220FP PDF

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS STB60100C-A Technical Data Data Sheet N1620, Rev. - Green Products STB60100C-A SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •


    Original     		STB60100C-A N1620, STB60100C-A AEC-Q101 PDF

    B60NE06L

    Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
    Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		STB60NE06L-16 B60NE06L b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4 PDF

    STP6NC60

    Abstract: 6NC60 STB6NC60-1 STP6NC60FP
    Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		STP6NC60 STP6NC60FP STB6NC60-1 O-220/TO-220FP/I2PAK 6NC60 O-220 O-220FP STB6NC60-1 STP6NC60FP PDF

    Untitled

    Abstract: No abstract text available
    Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STB6NA60 O-262) O-263) O-262 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T B 6 0 N E 0 6 L -1 6 60 V < 0 .0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		STB60NE06L-16 AT100Â O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB60NF03L N-CHANNEL 30V - 0.008 Q. - 60A D2PAK _ STripFET POWER MOSFET PRELIMINARY DATA TYP E S TB60N F03L V d ss R dS oii Id 30 V < 0.01 Q. 60 A • TYPICAL R D S (on) = 0.008 . OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS . LOW THRESHOLD DRIVE


    OCR Scan     		STB60NF03L TB60N O-263 P011P6/E PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ÍIJCTIMfflO STB60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STB60N06-14 dss 60 V Id R D S o n < 0.014 n 60 A TYPICAL R DS(on) =0.012 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STB60N06-14 O-262) O-263) cl2ci237 O-263 PDF