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    STD17 Search Results

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    STD17 Price and Stock

    WEE STD17W-F

    SNAP-ON MARKER STB/STD SIZE 17 W
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    DigiKey STD17W-F Tray 19,900 1,050
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    WEE STD17Y-1

    Wire Labels & Markers STD17Y-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD17Y-1 Tray 17,450 1,050
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    WEE STD17Y-K

    Wire Labels & Markers STD17Y-K
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    DigiKey STD17Y-K Bulk 16,450 1,100
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    WEE STD17Y-PLUS

    Wire Labels & Markers STD17Y-PLU
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    DigiKey STD17Y-PLUS Bulk 12,250 1,100
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    WEE STD17W-P

    SNAP-ON MARKER STB/STD SIZE 17 W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD17W-P Tray 7,600 1,050
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    Find more STD17 price and stock on Findchips.com

    STD17 Datasheets (123)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD170N4F7AG STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 40V 80A DPAK Original PDF
    STD175 Littelfuse This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries Original PDF
    STD175S Littelfuse This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries Original PDF
    STD1766 AUK NPN Silicon Transistor Original PDF
    STD17-APPLICATOR TE Connectivity Raychem Cable Protection Cables, Wires - Management - Accessories - STD17-APPLICATOR Original PDF
    STD17N05 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N05 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD17N05-1 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STD17N05-1 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STD17N05L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N05L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD17N05L-1 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD17N05LT4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STD17N05T4 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STD17N05T4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STD17N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD17N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    ...

    STD17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220

    8002 amplifier

    Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KST-8002-001 -200mA -500mA, 30MHz 8002 amplifier KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80

    1313L1

    Abstract: STD17N25 STF17N25
    Text: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω


    Original     		PDF STB17N25-1 STD17N25 STF17N25 STP17N25 O-220/FP STB17N25-1 STF17N25 O-220 1313L1 STD17N25

    Untitled

    Abstract: No abstract text available
    Text: MARCH 1995 MA31750 DS3748-6.5 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    Original     		PDF MA31750 DS3748-6 MIL-STD-1750 MA31750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MAS281.

    17NF25

    Abstract: 17NF2 STI17NF25 STP17NF25 STD17NF25 STF17NF25 st 393 JESD97 17nf25 data
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220 17NF25 17NF2 STP17NF25 STD17NF25 st 393 JESD97 17nf25 data

    MA31750 processor architecture

    Abstract: D100D MA31750 D200D 1750A processor architecture MA31750 architecture mil-std-1750 nte 4006 MAS281 MIL-STD-1750* BX
    Text: MA31750 MA31750 High Performance MIL-STD-1750 Microprocessor Replaces July 2002 version, DS3748-8.1 DS3748-8.2 Feb 2006 LN24435 The Dynex Semiconductor MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    Original     		PDF MA31750 MIL-STD-1750 DS3748-8 LN24435) MA31750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MA31750 processor architecture D100D D200D 1750A processor architecture MA31750 architecture nte 4006 MAS281 MIL-STD-1750* BX

    STD17N25

    Abstract: STP17N25 STF17N25 330EP P17N25 STB17N25-1
    Text: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω


    Original     		PDF STB17N25-1 STD17N25 STF17N25 STP17N25 O-220/FP STB17N25-1 STF17N25 O-220 STD17N25 STP17N25 330EP P17N25

    17NF25

    Abstract: 17NF2 17nf25 data 17nF DSA0067465 STD17NF25 STI17NF25 STF17NF25 STP17NF25
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STP17NF25 O-220 17NF25 17NF2 17nf25 data 17nF DSA0067465

    17NF2

    Abstract: No abstract text available
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220 17NF2

    SOT89 MARKING CODE B2

    Abstract: STD1766 STB1188
    Text: ㅇ STD1766 NPN Silicon Transistor Descriptions • Medium power amplifier PIN Connection Features • PC Collector power dissipation =2W (Ceramic substrate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KSD-T5B004-003 SOT89 MARKING CODE B2 STD1766 STB1188

    Untitled

    Abstract: No abstract text available
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KST-8002-002

    Untitled

    Abstract: No abstract text available
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KST-8006-002

    STB1188

    Abstract: STD1766
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KST-8006-001 200mA 500mA STB1188 STD1766

    STD17N05L

    Abstract: STD17N06L
    Text: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD17N05L STD17N06L 100oC 175oC O-251) O-252) O-251 O-252 STD17N05L STD17N06L

    MA31750 processor architecture

    Abstract: nte 4006 MA31750 CMOS 4002 l7 723 M/A MIL-STD-1750B mil-std-1750a ttl nim a006 GNDA15
    Text: MA31750 MA31750 High Performance MIL-STD-1750 Microprocessor Replaces July 1999 version, DS3748-7.0 DS3748-8.0 January 2000 The Dynex Semiconductor MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    Original     		PDF MA31750 MIL-STD-1750 DS3748-7 DS3748-8 MA31750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MA31750 processor architecture nte 4006 CMOS 4002 l7 723 M/A MIL-STD-1750B mil-std-1750a ttl nim a006 GNDA15

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD1766

    Abstract: Transistor B2 SOT-89 STB1188
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KST-8006-002 STD1766 Transistor B2 SOT-89 STB1188

    Untitled

    Abstract: No abstract text available
    Text: 51 GEC PLESSEY PR ELIM IN A R Y INFO R M ATIO N S E M I C O N D U C T O R S DS3748-4 2 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    OCR Scan     		PDF DS3748-4 MA31750 MIL-STD-1750 MA31750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MAS281. 32-bit

    17N06L

    Abstract: No abstract text available
    Text: £ jï S G S -1H 0 M S 0 N ULKgraMOeS S T D 17N0 5 L S T D 17N0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.0 8 5 Q. 17 A STD17N06L 60 V < 0.0 8 5 Q. 17 A • . . . . . . . TYPICAL RDS(on) = 0.065 £2


    OCR Scan     		PDF STD17N05L STD17N06L O-251) O-252) 17N06L

    Untitled

    Abstract: No abstract text available
    Text: STD17NE03L N - CHANNEL 30V - 0.034£2 - 17A - DPAK _ STripFET " POWER MOSFET PRELIMINARY DATA TYPE S TD 17N E 03L . . . . . . V dss R dS oii Id 30 V < 0.05 Q. 17 A TYPICAL RDs(on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C


    OCR Scan     		PDF STD17NE03L O-252 0068772-B

    transistor A4t 85

    Abstract: No abstract text available
    Text: S G S -T H O M S O N S T D 1 7 N 0 5 L r a n c œ iiiL iC T iû iia D e i S T D 1 7 N 0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.085 Û 17 A STD17N06L 60 V < 0.085 Q 17 A TYPICAL RDS(on) = 0.065 D,


    OCR Scan     		PDF STD17N05L STD17N06L O-251) O-252) O-252 O-251 STD17N05L/STD17N06L 0068772-B GG72721 transistor A4t 85

    Untitled

    Abstract: No abstract text available
    Text: P B t i GEC plessey PRELIMINARY INFORMATION DS3748-2.2 June 1993 JMA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The G EC P le s s e y M A 31 750 is a s in g le -c h ip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    OCR Scan     		PDF DS3748-2 JMA31750 MIL-STD-1750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MA31750 MAS281. 32-bit 1x106

    17N06

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « S T D 17N05 S T D 17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss R DS on Id STD17N05 50 V < 0.085 Q. 17 A STD17N06 60 V < 0.085 Q. 17 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 17N05 17N06 STD17N05 STD17N06 O-251) O-252) O-251 O-252 STD17N05/STD17N06 17N06

    Untitled

    Abstract: No abstract text available
    Text: PACE 1757M/ME COMPLETE EMBEDDED CPU SUBSYSTEM 4 -FFATURES Implements complete MIL-STD-1750A ISA Including optional MMU, MFSR, and BPU functions. • Programmable address wait states. • Sixteen levels of interrupts are provided per MIL-STD1750A. Interrupts can be either edge- or level-sensitive


    OCR Scan     		PDF 1757M/ME MIL-STD-1750A P1757M 40MHz P1757ME 40MHz M1L-STD-1760A 10MHz