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    STMicroelectronics STGW30V60DF

    IGBT TRENCH FS 600V 60A TO247-3
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    DigiKey STGW30V60DF Tube 260 1
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    Mouser Electronics STGW30V60DF 1,976
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    Verical STGW30V60DF 2,340 5
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    Arrow Electronics STGW30V60DF 2,340 15 Weeks 1
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    Newark STGW30V60DF Bulk 1
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    STMicroelectronics STGW30V60DF 1,976 1
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    Future Electronics STGW30V60DF Tube 60 15 Weeks 30
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    STGW30V60DF Tube 15 Weeks 1
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    TME STGW30V60DF 62 1
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    Avnet Silica STGW30V60DF 3,960 16 Weeks 30
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    Win Source Electronics STGW30V60DF 7,490
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    Others STGW30V60DF

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    Chip-Germany GmbH STGW30V60DF 30,023
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    STGW30V60DF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW30V60DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 258W TO247 Original PDF

    STGW30V60DF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220


    Original
    PDF STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF O-220 O-247 DocID024361

    GW30V60DF

    Abstract: STGW30V60DF STGWT30V60DF GWT30V60DF igbt welding circuit ESCC
    Text: STGW30V60DF STGWT30V60DF 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C  Very high speed switching series  Tail-less switching off 2 3 3 1 2 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    PDF STGW30V60DF STGWT30V60DF O-247 DocID024361 GW30V60DF STGWT30V60DF GWT30V60DF igbt welding circuit ESCC

    GWT30V60DF

    Abstract: GW30V60DF
    Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 1 1 D²PAK TO-220


    Original
    PDF STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF O-220 O-247 DocID024361 GWT30V60DF GW30V60DF

    Untitled

    Abstract: No abstract text available
    Text: STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 30 A


    Original
    PDF STGFW30V60F, STGW30V60F, STGWT30V60F O-247 DocID025005

    Untitled

    Abstract: No abstract text available
    Text: STGFW30V60F, STGW30V60F, STGWT30V60F 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Very high speed switching series • Tail-less switching off 3 TO-3PF 2 • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    PDF STGFW30V60F, STGW30V60F, STGWT30V60F O-247 DocID025005

    Untitled

    Abstract: No abstract text available
    Text: STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 30 A


    Original
    PDF STGFW30V60F, STGW30V60F, STGWT30V60F O-247 DocID025005

    Untitled

    Abstract: No abstract text available
    Text: STGB30V60F, STGP30V60F 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Very high speed switching series TAB • Tail-less switching off • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    PDF STGB30V60F, STGP30V60F O-220 DocID025049

    Untitled

    Abstract: No abstract text available
    Text: STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off TAB • VCE sat = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution


    Original
    PDF STGB30V60F, STGP30V60F O-220 DocID025049

    Untitled

    Abstract: No abstract text available
    Text: STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off TAB • VCE sat = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution


    Original
    PDF STGB30V60F, STGP30V60F O-220 DocID025049