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    STGW60H65DF Search Results

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    STGW60H65DF Price and Stock

    STMicroelectronics STGW60H65DFB-4

    IGBT
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    DigiKey STGW60H65DFB-4 Tube 596 1
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    Newark STGW60H65DFB-4 Bulk 30 1
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    TME STGW60H65DFB-4 1
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    Avnet Silica STGW60H65DFB-4 540 17 Weeks 30
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    STMicroelectronics STGW60H65DFB

    IGBT TRENCH FS 650V 80A TO247
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    DigiKey STGW60H65DFB Tube 540 1
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    Avnet Americas STGW60H65DFB Tube 15 Weeks 600
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    Mouser Electronics STGW60H65DFB 664
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    Newark STGW60H65DFB Bulk 320 1
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    STMicroelectronics STGW60H65DFB 662 1
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    TME STGW60H65DFB 162 1
    • 1 $5.3
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    Avnet Silica STGW60H65DFB 1,260 16 Weeks 30
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    Win Source Electronics STGW60H65DFB 4,200
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    STMicroelectronics STGW60H65DF

    IGBT 650V 120A 360W TO247
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    DigiKey STGW60H65DF Tube 600
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    STGW60H65DF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW60H65DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 360W TO247 Original PDF
    STGW60H65DFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO-247 Original PDF
    STGW60H65DFB-4 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF

    STGW60H65DF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GW60H65DFB

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 PDF

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1 PDF

    GW60H65DF

    Abstract: STGW60H65DF stgw60h rthjc
    Text: STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    STGW60H65DF O-247 GW60H65DF STGW60H65DF stgw60h rthjc PDF

    IGBT 60A

    Abstract: No abstract text available
    Text: STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    STGW60H65DF O-247 IGBT 60A PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    STGW60H65DF O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65FB STGWT60H65FB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65FB STGWT60H65FB O-247 DocID025187 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65FB STGWT60H65FB O-247 DocID025187 PDF

    inverter welding machine circuit board

    Abstract: igbt inverter welder service manual IGBT welder circuit power variation circuit for arc welding inverter arc welder circuit inverter welder circuit igbt arc welder welder FERRITE TRANSFORMER design
    Text: AN4638 Application note Welding machines: V and HB series IGBTs on two-switch forward converters Anselmo Liberti, Rosario Gulino Introduction The two-switch forward converter also known as asymmetrical half-bridge forward converter is a popular topology often used in industrial welding machines with low-tomedium power requirements. The inverter stage in this hard-switched forward topology


    Original
    AN4638 DocID027309 inverter welding machine circuit board igbt inverter welder service manual IGBT welder circuit power variation circuit for arc welding inverter arc welder circuit inverter welder circuit igbt arc welder welder FERRITE TRANSFORMER design PDF