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    STGW80H65DFB Search Results

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    STGW80H65DFB Price and Stock

    STMicroelectronics STGW80H65DFB

    IGBT TRENCH FS 650V 120A TO-247
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    DigiKey STGW80H65DFB Tube 484 1
    • 1 $6.89
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    • 100 $3.952
    • 1000 $2.83225
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    Avnet Americas STGW80H65DFB Tube 15 Weeks 600
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    STGW80H65DFB Tube 15 Weeks 600
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    • 1000 $4.1067
    • 10000 $3.86978
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    Mouser Electronics STGW80H65DFB
    • 1 $6.82
    • 10 $6.78
    • 100 $3.29
    • 1000 $2.82
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    Verical STGW80H65DFB 36,600 600
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    STGW80H65DFB 2,052 2
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    • 10 $5.4498
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    STGW80H65DFB 596 5
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    • 10 $4.5
    • 100 $3.55
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    Arrow Electronics STGW80H65DFB 36,600 15 Weeks 600
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    STGW80H65DFB 2,053 15 Weeks 1
    • 1 $6.6497
    • 10 $6.3991
    • 100 $3.0642
    • 1000 $2.8198
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    Newark STGW80H65DFB Bulk 4,027 1
    • 1 $6.99
    • 10 $6.22
    • 100 $4.42
    • 1000 $4.15
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    Future Electronics STGW80H65DFB Tube 930 15 Weeks 30
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    STGW80H65DFB Tube 15 Weeks 600
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    STGW80H65DFB Tube 15 Weeks 600
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    • 100 $2.79
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    Quest Components STGW80H65DFB 2
    • 1 $8.5353
    • 10 $5.6902
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    TME STGW80H65DFB 175 1
    • 1 $8.38
    • 10 $6.67
    • 100 $5.99
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    Avnet Silica STGW80H65DFB 960 16 Weeks 30
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    Chip One Stop STGW80H65DFB Tube 596
    • 1 $6.18
    • 10 $4.5
    • 100 $3.55
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    EBV Elektronik STGW80H65DFB 16 Weeks 30
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    Win Source Electronics STGW80H65DFB 6,000
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    • 100 $3.0694
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    STMicroelectronics STGW80H65DFB-4

    IGBT TRENCH FS 650V 120A TO-247
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    DigiKey STGW80H65DFB-4 Tube 600
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    • 1000 $3.94875
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    Mouser Electronics STGW80H65DFB-4 315
    • 1 $7.59
    • 10 $6.5
    • 100 $5.42
    • 1000 $3.94
    • 10000 $3.94
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    TME STGW80H65DFB-4 1
    • 1 $8.16
    • 10 $6.8
    • 100 $6.48
    • 1000 $5.63
    • 10000 $4.85
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    Avnet Silica STGW80H65DFB-4 16 Weeks 30
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    EBV Elektronik STGW80H65DFB-4 16 Weeks 30
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    ACTIVE COMPNTS/DIODES STGW80H65DFB

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    Bisco Industries STGW80H65DFB 25
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    STGW80H65DFB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW80H65DFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 469W TO-247 Original PDF
    STGW80H65DFB-4 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT BIPO 650V 80A TO247 Original PDF

    STGW80H65DFB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original
    STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW80H65DFB STGWT80H65DFB O-247 DocID024366 PDF

    gy-80

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original
    STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 gy-80 PDF

    GWT80H65DFB

    Abstract: stgwt80h65dfb STGW80H65DFB ST IGBT code marking stgwt80h65
    Text: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original
    STGW80H65DFB STGWT80H65DFB O-247 DocID024366 GWT80H65DFB stgwt80h65dfb ST IGBT code marking stgwt80h65 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original
    STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 PDF