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    STGWT60H65DFB Price and Stock

    STMicroelectronics STGWT60H65DFB

    IGBT TRENCH FS 650V 80A TO3P
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    DigiKey STGWT60H65DFB Tube 161 1
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    Mouser Electronics STGWT60H65DFB 501
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    STMicroelectronics STGWT60H65DFB 501 1
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    Future Electronics STGWT60H65DFB Tube 15 Weeks 300
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    STGWT60H65DFB Tube 15 Weeks 600
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    TME STGWT60H65DFB 155 1
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    STGWT60H65DFB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGWT60H65DFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO3P-3L Original PDF

    STGWT60H65DFB Datasheets Context Search

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    GW60H65DFB

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 PDF

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65DFB STGWT60H65DFB O-247 DocID024365 PDF