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    STGWT80H65DFB Price and Stock

    STMicroelectronics STGWT80H65DFB

    IGBT 650V 120A 469W TO3P-3L
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    Avnet Americas STGWT80H65DFB Bulk 17 Weeks, 1 Days 1
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    Mouser Electronics STGWT80H65DFB 229
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    Newark STGWT80H65DFB Bulk 106 1
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    STMicroelectronics STGWT80H65DFB 229 1
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    Future Electronics STGWT80H65DFB Tube 3 15 Weeks 1
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    STGWT80H65DFB Tube 15 Weeks 300
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    STGWT80H65DFB Tube 15 Weeks 300
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    STGWT80H65DFB Tube 15 Weeks 300
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    TME STGWT80H65DFB 1
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    Avnet Silica STGWT80H65DFB 300 16 Weeks 30
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    STGWT80H65DFB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGWT80H65DFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 469W TO3P-3L Original PDF

    STGWT80H65DFB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		PDF STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366

    Untitled

    Abstract: No abstract text available
    Text: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW80H65DFB STGWT80H65DFB O-247 DocID024366

    gy-80

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		PDF STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 gy-80

    GWT80H65DFB

    Abstract: stgwt80h65dfb STGW80H65DFB ST IGBT code marking stgwt80h65
    Text: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original     		PDF STGW80H65DFB STGWT80H65DFB O-247 DocID024366 GWT80H65DFB stgwt80h65dfb ST IGBT code marking stgwt80h65

    Untitled

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		PDF STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366