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    Abstract: STH200N55F3-2
    Text: STH200N55F3-2 N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET III Power MOSFET Preliminary data Features Type VDSS RDS on max ID (1) STH200N55F3-2 55 V < 2.6 mΩ 160 A 2 1. Current limited by package • Ultra low on-resistance 3 ■ 100% avalanche tested


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