Untitled
Abstract: No abstract text available
Text: STHI07N50FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)
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STHI07N50FI
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SCHEMATIC IGNITION iGBT
Abstract: No abstract text available
Text: / S T S C S -T H O M S O N ^ 7 # , H ü ö m ilg fM S O e i S T H I0 7 N 5 0 S T H I0 7 N 5 0 FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IGBT PRELIMINARY DATA TYPE V dss 500 V 500 V STHI07N50 STHI07N50FI 7 A 7 A • HIGH INPUT IMPEDANCE
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STHI07N50
STHI07N50FI
ISOWATT220
500ms
SCHEMATIC IGNITION iGBT
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TT220
Abstract: No abstract text available
Text: SGS-THOMSON * J f m[*IMmi gTO(oM][](g§ STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT PRELIMINARY DATA TYPE V DSS STHI07N50 STHI07N50FI 500 V 500 V 7 A 7 A • HIGH INPUT IMPEDANCE • LOW O N-VOLTAGE • HIGH CURRENT C APABILITY
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STHI07N50
STHI07N50FI
ATT220
500ms
TT220
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Untitled
Abstract: No abstract text available
Text: 30E » / 3 7 • 7 R2 T 237 D0 3 0 1 0 b fl S G S -T H O M S O N s 6 s-tho m sôn H I0 7 N 5 0 [^0 [^@[l[L[l©¥^ ô [i0(gS_ S T H I 0 7 N 5 0 F I HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE STHI07N50
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STHI07N50
STHI07N50FI
ISOWATT220
500ms
T-39-73
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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P-220
ISOWATT220
O-220
O-220
STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
sgs*P381
ISOWATT218 IGBT
STLT20
MTP3055AFI
SGSP381
IRFP453FI
SGSP579
SGSP591
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
O-220
ISOWATT22Û
ISOWATT22Q
ISOWATT220
MTP3055AFI
IRF722FI
IRFP453FI
SGSP579
SGSP591
SGS35MA050D1
SGSP382
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sgs*P381
Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
ISS 355
IRFp150 To3 package
IRFP350FI
MTP3055AFI
SGSP591
SGSP239
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irfp 950
Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6
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SGS35MA050D1
TSD4M450V
MTP3N60
MTP3N60FI
MTH6N60FI
MTP6N60
STHV82
STHV102
TSD5MG40V
STHI07N50FI
irfp 950
SGSP479
transistor BUZ45
SGSP369
BUZ74
IRFP 740
IRF 950
SGSP239
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
IRFp150 To3 package
bu245a
BR 1300
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SGSP369
Abstract: TSD4M450V SGSP479 IRFP450fi IRF840FI sgsp579 SGSP239 SGSP364 SGSP474 MTP3N6
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> >d Package Type (A) •d max ptot Sfs min Ciss max (A) (W) (mho) (pF) 450 450 450 450 450 1.5 1.5 1.5 1.1 1.1 2.5 2.5 2.5 4.4 4.4 TO 220 ISOWATT 220 TO 220 TO 220 ISOWATT 220
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IRF831
IRF831FI
SGSP364
IRF843
IRF843FI
IRF841
IRF841FI
SGSP474
SGSP574
IRF453
SGSP369
TSD4M450V
SGSP479
IRFP450fi
IRF840FI
sgsp579
SGSP239
MTP3N6
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TSD4M450V
Abstract: SGSP479 SGSP239 tsd4m45 IRF840FI SGSP369 SGSP474 STHV82 TSD4M250V TSD4M351V
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500
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IRF831
IRF831FI
SGSP364
IRF843
IRF843FI
IRF841
IRF841FI
SGSP474
SGSP574
IRF453
TSD4M450V
SGSP479
SGSP239
tsd4m45
IRF840FI
SGSP369
STHV82
TSD4M250V
TSD4M351V
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