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    STMICROELECTRONICS DATE CODE DPAK Search Results

    STMICROELECTRONICS DATE CODE DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    54184J/B Rochester Electronics LLC 54184 - BCD to Binary Converters Visit Rochester Electronics LLC Buy
    74184N Rochester Electronics LLC 74184 - BCD to Binary Converters Visit Rochester Electronics LLC Buy

    STMICROELECTRONICS DATE CODE DPAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STMicroelectronics DPAK Marking CODE

    Abstract: STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG-COM/03/391 Products in DPAK, PPAK, D2PAK, P2PAK packages:Lead free component connections 2003/12/11 PCN DSG-COM/03/391 Product Family /Commercial Product DPAK,PPAK,P2PAK,D2PAK for V.R. devices Type Of Change Package assembly process change


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    DSG-COM/03/391 STMicroelectronics DPAK Marking CODE STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT PDF

    STMicroelectronics Date Code DPAK

    Abstract: No abstract text available
    Text: STGD6NC60H N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD6NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    STGD6NC60H STGD6NC60HT4 STMicroelectronics Date Code DPAK PDF

    STMicroelectronics Date Code DPAK

    Abstract: ic MARKING QG STGD3NC60H
    Text: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD3NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    STGD3NC60H STGD3NC60HT4 STMicroelectronics Date Code DPAK ic MARKING QG STGD3NC60H PDF

    ic MARKING QG

    Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
    Text: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)


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    STGD6NC60HD STGD6NC60HDT4 ic MARKING QG GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE PDF

    ic MARKING QG

    Abstract: STGD3NC60HD
    Text: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)


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    STGD3NC60HD STGD3NC60HDT4 ic MARKING QG STGD3NC60HD PDF

    GD5NB120SZ

    Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
    Text: STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE


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    STGD5NB120SZ-1 STGD5NB120SZ GD5NB120SZ STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb PDF

    STGD3NC60H

    Abstract: STMicroelectronics Date Code DPAK
    Text: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE VCES STGD3NC60HT4 • ■ ■ ■ ■ 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    STGD3NC60H STGD3NC60HT4 STGD3NC60H STMicroelectronics Date Code DPAK PDF

    STD40NF10

    Abstract: D40NF
    Text: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application


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    STD40NF10 STD40NF10 D40NF PDF

    ic 4510

    Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
    Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small


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    ST901T STD901T O-220 ic 4510 ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060 PDF

    GP7NC60H

    Abstract: TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code STGP7NC60H D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220
    Text: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)


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    STGP7NC60H STGD7NC60H O-220/DPAK STGP7NC60H STGD7NC60HT4 GP7NC60H TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220 PDF

    STMicroelectronics Date Code DPAK

    Abstract: No abstract text available
    Text: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)


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    STGP7NC60H STGD7NC60H O-220/DPAK STGP7NC60H STGD7NC60HT4 STMicroelectronics Date Code DPAK PDF

    STGD7NC60H

    Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
    Text: STGP7NC60H - STGD7NC60H N-CHANNEL 7A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)


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    STGP7NC60H STGD7NC60H O-220/DPAK STGP7NC60H STGD7NC60HT4 STGD7NC60H GP7NC60H STGD7NC60HT4 STMicroelectronics date code TO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small


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    ST901T STD901T O-220 PDF

    JESD97

    Abstract: MJD31C MJD32C MJD32CT4
    Text: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology


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    MJD32C MJD31C O-252 O-252 MJD32CT4 JESD97 MJD31C MJD32C MJD32CT4 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4)


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    STD1802 O-252) O-252 PDF

    d25nf

    Abstract: d25nf10l D25NF10LA d25nf10
    Text: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications


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    STD25NF10LA d25nf d25nf10l D25NF10LA d25nf10 PDF

    7662

    Abstract: No abstract text available
    Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■


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    STD35NF06L STD35NF06LT4 7662 PDF

    MJD31C

    Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
    Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD31CT4-A O-252 MJD32C O-252 MJD31C MJD31C MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK PDF

    MJD31C

    Abstract: MJD31CT4 MJD32C
    Text: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology


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    MJD31C O-252 MJD32C O-252 MJD31CT4 MJD31C MJD31CT4 MJD32C PDF

    MJD31C

    Abstract: MJD32C MJD32CT4-A
    Text: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD32CT4-A O-252 MJD31C O-252 MJD32C MJD31C MJD32C MJD32CT4-A PDF

    STGD3NC60HD

    Abstract: No abstract text available
    Text: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)


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    STGD3NC60HD STGD3NC60HDT4 STGD3NC60HD PDF

    STD65N55F3

    Abstract: No abstract text available
    Text: STD65N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD65N55F3 55V <8.5mΩ 80A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of


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    STD65N55F3 STD65N55F3 PDF

    D1802

    Abstract: transistor d1802 STD1802 d1802 transistor transistor d1802 dpak JESD97 STD1802T4 D-PAK st 833 TRANSISTOR T4 ST
    Text: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4)


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    STD1802 O-252) O-252 D1802 transistor d1802 STD1802 d1802 transistor transistor d1802 dpak JESD97 STD1802T4 D-PAK st 833 TRANSISTOR T4 ST PDF

    13473

    Abstract: MJD31C MJD31CT4-A MJD32C
    Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD31CT4-A O-252 MJD32C O-252 MJD31C 13473 MJD31C MJD31CT4-A MJD32C PDF