STMicroelectronics DPAK Marking CODE
Abstract: STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG-COM/03/391 Products in DPAK, PPAK, D2PAK, P2PAK packages:Lead free component connections 2003/12/11 PCN DSG-COM/03/391 Product Family /Commercial Product DPAK,PPAK,P2PAK,D2PAK for V.R. devices Type Of Change Package assembly process change
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DSG-COM/03/391
STMicroelectronics DPAK Marking CODE
STMicroelectronics Date Code DPAK
Date Code Marking STMicroelectronics PACKAGE DPAK
INFINEON PART MARKING DPAK
STMicroelectronics DPAK marking code date
how to identify dpak
ecopack
outgoing qc ST Microelectronics
KF33BDT-TR
LD1117DT
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STMicroelectronics Date Code DPAK
Abstract: No abstract text available
Text: STGD6NC60H N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD6NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT
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STGD6NC60H
STGD6NC60HT4
STMicroelectronics Date Code DPAK
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STMicroelectronics Date Code DPAK
Abstract: ic MARKING QG STGD3NC60H
Text: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD3NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT
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STGD3NC60H
STGD3NC60HT4
STMicroelectronics Date Code DPAK
ic MARKING QG
STGD3NC60H
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ic MARKING QG
Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
Text: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)
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STGD6NC60HD
STGD6NC60HDT4
ic MARKING QG
GD6NC60HD
STGD6NC60HD
STGD6NC60HDT4
STMicroelectronics DPAK Marking CODE
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ic MARKING QG
Abstract: STGD3NC60HD
Text: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)
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STGD3NC60HD
STGD3NC60HDT4
ic MARKING QG
STGD3NC60HD
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GD5NB120SZ
Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
Text: STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE
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STGD5NB120SZ-1
STGD5NB120SZ
GD5NB120SZ
STGD5NB120SZT4
SCHEMATIC igbt dimmer
STGD5NB120SZ
gd5n
dimmer diagrams IGBT
STGD5NB120SZ-1
marking c2 diode
gd5nb
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STGD3NC60H
Abstract: STMicroelectronics Date Code DPAK
Text: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE VCES STGD3NC60HT4 • ■ ■ ■ ■ 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT
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STGD3NC60H
STGD3NC60HT4
STGD3NC60H
STMicroelectronics Date Code DPAK
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STD40NF10
Abstract: D40NF
Text: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application
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STD40NF10
STD40NF10
D40NF
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ic 4510
Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small
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ST901T
STD901T
O-220
ic 4510
ST901T
STD901T
4510
901T
HIGH VOLTAGE NPN DARLINGTON
st901
automotive ignition
ST TAB 060
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GP7NC60H
Abstract: TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code STGP7NC60H D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220
Text: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)
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STGP7NC60H
STGD7NC60H
O-220/DPAK
STGP7NC60H
STGD7NC60HT4
GP7NC60H
TO-220 footprint
STMicroelectronics Date Code DPAK
STMicroelectronics to-220 date code
D7NC60H
STGD7NC60H
STGD7NC60HT4
TO252-DPAK
STMicroelectronics date code to-220
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STMicroelectronics Date Code DPAK
Abstract: No abstract text available
Text: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)
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STGP7NC60H
STGD7NC60H
O-220/DPAK
STGP7NC60H
STGD7NC60HT4
STMicroelectronics Date Code DPAK
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STGD7NC60H
Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
Text: STGP7NC60H - STGD7NC60H N-CHANNEL 7A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)
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STGP7NC60H
STGD7NC60H
O-220/DPAK
STGP7NC60H
STGD7NC60HT4
STGD7NC60H
GP7NC60H
STGD7NC60HT4
STMicroelectronics date code TO-220
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Untitled
Abstract: No abstract text available
Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small
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ST901T
STD901T
O-220
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JESD97
Abstract: MJD31C MJD32C MJD32CT4
Text: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology
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MJD32C
MJD31C
O-252
O-252
MJD32CT4
JESD97
MJD31C
MJD32C
MJD32CT4
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Untitled
Abstract: No abstract text available
Text: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4)
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STD1802
O-252)
O-252
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d25nf
Abstract: d25nf10l D25NF10LA d25nf10
Text: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications
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STD25NF10LA
d25nf
d25nf10l
D25NF10LA
d25nf10
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7662
Abstract: No abstract text available
Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■
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STD35NF06L
STD35NF06LT4
7662
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MJD31C
Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD31CT4-A
O-252
MJD32C
O-252
MJD31C
MJD31C
MJD31CT4-A
MJD32C
Date Code Marking STMicroelectronics PACKAGE DPAK
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MJD31C
Abstract: MJD31CT4 MJD32C
Text: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology
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MJD31C
O-252
MJD32C
O-252
MJD31CT4
MJD31C
MJD31CT4
MJD32C
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MJD31C
Abstract: MJD32C MJD32CT4-A
Text: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD32CT4-A
O-252
MJD31C
O-252
MJD32C
MJD31C
MJD32C
MJD32CT4-A
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STGD3NC60HD
Abstract: No abstract text available
Text: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)
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STGD3NC60HD
STGD3NC60HDT4
STGD3NC60HD
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STD65N55F3
Abstract: No abstract text available
Text: STD65N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD65N55F3 55V <8.5mΩ 80A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of
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STD65N55F3
STD65N55F3
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D1802
Abstract: transistor d1802 STD1802 d1802 transistor transistor d1802 dpak JESD97 STD1802T4 D-PAK st 833 TRANSISTOR T4 ST
Text: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4)
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STD1802
O-252)
O-252
D1802
transistor d1802
STD1802
d1802 transistor
transistor d1802 dpak
JESD97
STD1802T4
D-PAK
st 833
TRANSISTOR T4 ST
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13473
Abstract: MJD31C MJD31CT4-A MJD32C
Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD31CT4-A
O-252
MJD32C
O-252
MJD31C
13473
MJD31C
MJD31CT4-A
MJD32C
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