DP152S
Abstract: No abstract text available
Text: LCDP1521S Dual line programmable transient voltage suppressor for SLIC protection Features • Dual line programmable transient voltage suppressor with separated gates ■ Wide negative firing voltage range: VGn = -175 V max. ■ Low dynamic switching voltages: VFP and
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LCDP1521S
UL1950,
UL1459
TIA-968-A
DP152S
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Untitled
Abstract: No abstract text available
Text: LCDP1521S Dual line programmable transient voltage suppressor for SLIC protection Features • Dual line programmable transient voltage suppressor with separated gates ■ Wide negative firing voltage range: VGn = -175 V max. ■ Low dynamic switching voltages: VFP and
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LCDP1521S
UL1950,
UL1459
TIA-968-A
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Untitled
Abstract: No abstract text available
Text: STL6N2VH5 N-channel 20 V, 0.025 Ω, 6 A STripFET V Power MOSFET in PowerFLAT™ 2x2 package Datasheet — target specification Features Order code VDSS STL6N2VH5 20 V RDS on max. ID PTOT 2 0.035Ω (VGS=4.5V) 6 A 2.4W 0.055Ω (VGS=2.5V) • Very low switching gate charge
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Untitled
Abstract: No abstract text available
Text: STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET V Power MOSFET in PowerFLAT™ 2x2 package Datasheet − preliminary data Features Order code VDSS STL6N2VH5 20 V RDS on max. ID PTOT 2 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) • Very low switching gate charge
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STI300N4F6
Abstract: No abstract text available
Text: STI300N4F6 N-channel 40 V, 1.4 mΩ, 160 A, I²PAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max. ID STI300N4F6 40 V 2.0 mΩ 160 A(1) 1. Limited by wire bonding • Standard level VGS(th) ■ 175 °C junction temperature
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STI300N4F6
AM01474v1
STI300N4F6
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Untitled
Abstract: No abstract text available
Text: STP77N6F6 N-channel 60 V, 6.6 mΩ typ., 77 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet — production data Features Order code VDS RDS on max ID PTOT TAB STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W • RDS(on) * Qg industry benchmark
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STP77N6F6
O-220
STP77N6F6
O-220
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EMIF10-1K010F2
Abstract: AN1235 AN1751 STMicroelectronics marking code date
Text: EMIF10-1K010F2 EMI FILTER INCLUDING ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required • Mobile phones and communication systems ■ Computers, printers and MCU Boards DESCRIPTION The EMIF10-1K010F2 is a highly integrated
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EMIF10-1K010F2
EMIF10-1K010F2
EMIF10
AN1235
AN1751
STMicroelectronics marking code date
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Untitled
Abstract: No abstract text available
Text: STL6N3LLH6 N-channel 30 V, 0.025 Ω, 6 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT™ 2x2 package Datasheet — preliminary data Features Order code VDSS STL6N3LLH6 30 V RDS on max. ID PTOT 2 0.035 Ω (VGS=10 V) 6 A 2.4W 0.06 Ω (VGS=4.5 V) •
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AN1235
Abstract: AN1751 EMIF10-1K010F1
Text: EMIF10-1K010F1 10 LINES EMI FILTER AND ESD PROTECTION IPADTM MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : Mobile phones and communication systems Computers, printers and MCU Boards • ■ DESCRIPTION The EMIF10-1K010F1 is a highly integrated
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EMIF10-1K010F1
EMIF10-1K010F1
EMIF10
AN1235
AN1751
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AN1235
Abstract: EMIF10-1K010F1
Text: EMIF10-1K010F1 EMI FILTER INCLUDING ESD PROTECTION IPADTM MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : Mobile phones and communication systems Computers, printers and MCU Boards • ■ DESCRIPTION The EMIF10-1K010F1 is a highly integrated
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EMIF10-1K010F1
EMIF10-1K010F1
EMIF10
AN1235
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stmicroelectronics datecode
Abstract: AN1235 ESDA14V2-4BF1 ESDA14V2-4BF2 JESD97
Text: ESDA14V2-4BF2 ASD Application Specific Devices QUAD BIDIRECTIONAL TRANSIL ARRAY FOR ESD PROTECTION APPLICATION Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers • Communication systems and cellular phones
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ESDA14V2-4BF2
ESDA14V2-4BF2
IEC61000-4-2
stmicroelectronics datecode
AN1235
ESDA14V2-4BF1
JESD97
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square pulse generator
Abstract: STMicroelectronics marking code VG 74HC04 sim01 diode MARKING CODE A9 Date Code Marking STMicroelectronics diode A1SH diode MARKING A9 EMIF03-SIM01
Text: EMIF03-SIM01 A.S.D.TM 3 LINES EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATIONS EMI filtering protection and ESD for : SIM Interface Subscriber identify Module • DESCRIPTION The EMIF03-SIM01 is a highly integrated array designed to suppress EMI / RFI noise in all
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EMIF03-SIM01
EMIF03-SIM01
square pulse generator
STMicroelectronics marking code VG
74HC04
sim01
diode MARKING CODE A9
Date Code Marking STMicroelectronics diode
A1SH
diode MARKING A9
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AN1235
Abstract: AN1751 EMIF10-1K010F1
Text: EMIF10-1K010F1 10 LINES EMI FILTER AND ESD PROTECTION IPADTM MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : Mobile phones and communication systems Computers, printers and MCU Boards • ■ DESCRIPTION The EMIF10-1K010F1 is a highly integrated
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EMIF10-1K010F1
EMIF10-1K010F1
EMIF10
AN1235
AN1751
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STL8DN6LF3
Abstract: No abstract text available
Text: STL8DN6LF3 Dual N-channel 60 V, 20 mΩ, 7.8 A STripFET III Power MOSFET in PowerFLAT™ 5x6 dual pad Preliminary data Features Type VDSS RDS on max ID STL8DN6LF3 60 V < 30 mΩ 7.8 A (1) 1. The value is rated according Rthj-pcb 1 2 • Logic level VGS(th)
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Untitled
Abstract: No abstract text available
Text: STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET V Power MOSFET in a PowerFLAT™ 2x2 package Datasheet — production data Features Order code 1 VDS 5 2 0.04 Ω VGS=2.5 V 6 A 2.4 W • Very low thermal resistance 4 3 STL6N2VH5 20 V • Very low switching gate charge
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DocID023150
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Untitled
Abstract: No abstract text available
Text: STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in a SOT23-6L package Datasheet — production data Features Order code VDS RDS on max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 4 5 6 1.6 W • Very low profile package 3 2 • Conduction losses reduced
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OT23-6L
OT23-6L
DocID026116
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Untitled
Abstract: No abstract text available
Text: STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet — preliminary data Features Order code STD26P3LLH6 VDSS RDS on max 30 V (1) 0.030 Ω ID PTOT TAB 12 A 40 W 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark
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STD26P3LLH6
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8dn4
Abstract: OA128
Text: STL8DN4LLF6 Dual N-channel 40 V, 0.025 Ω typ., 8 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet − target specification Features Order code VDS STL8DN4LLF6 40 V RDS on max ID 0.03 Ω (VGS=10 V) 0.05 Ω (VGS=4.5 V)
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DocID024377
8dn4
OA128
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AN1235
Abstract: AN1751 EMIF10-1K010F1
Text: EMIF10-1K010F1 10 LINES EMI FILTER AND ESD PROTECTION IPADTM MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : Mobile phones and communication systems Computers, printers and MCU Boards • ■ DESCRIPTION The EMIF10-1K010F1 is a highly integrated
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EMIF10-1K010F1
EMIF10-1K010F1
EMIF10
AN1235
AN1751
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Untitled
Abstract: No abstract text available
Text: STL130N8F7 N-channel 80 V, 4 mΩ, 24 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID PTOT STL130N8F7 80 V 4.6 mΩ (VGS=10 V) 24 A 5W • Ultra low on-resistance 1
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STL130N8F7
DocID023889
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Untitled
Abstract: No abstract text available
Text: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,
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SD2951-10
SD2951-10
SD2931-10
DocID025130
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INTEGRATED CIRCUIT DATE code stmicroelectronics
Abstract: L3121B IEC1000-4-5 L3000N VDE0433 VDE0878 transformer 220v 2a
Text: L3121B Application Specific Discretes A.S.D.TM PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.
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L3121B
INTEGRATED CIRCUIT DATE code stmicroelectronics
L3121B
IEC1000-4-5
L3000N
VDE0433
VDE0878
transformer 220v 2a
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80n70
Abstract: STP80N70F6 STP80N70 80n70f
Text: STP80N70F6 N-channel 68 V, 0.0063 Ω typ., 96 A STripFET VI DeepGATE™ Power MOSFET in TO-220 package Datasheet − production data Features Order code VDSS max. RDS on max. STP80N70F6 68 V < 0.008 Ω (VGS= 10 V) • ID 96 A 110 W RDS(on) * Qg industry benchmark
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STP80N70F6
O-220
O-220
80n70
STP80N70F6
STP80N70
80n70f
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L3121B
Abstract: STMicroelectronics marking code date Date Code Marking STMicroelectronics IEC1000-4-5 L3000N VDE0433 VDE0878
Text: L3121B Application Specific Discretes A.S.D.TM PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.
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L3121B
L3121B
STMicroelectronics marking code date
Date Code Marking STMicroelectronics
IEC1000-4-5
L3000N
VDE0433
VDE0878
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