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    Untitled

    Abstract: No abstract text available
    Text: STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		STN8822A STN8822A 25m-ohm 42m-ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		STN8822 STN8822 20m-ohm 24m-ohm 32m-ohm PDF