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    STP MOSFET Search Results

    STP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    STP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5NB60FP

    Abstract: 5NB60 STP5NB60 STP5NB60FP
    Text: STP5NB60 STP5NB60FP  N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP 5NB60 STP 5NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.0 Ω < 2.0 Ω 5 A 3 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP5NB60 STP5NB60FP O-220/TO-220FP 5NB60 5NB60FP 5NB60FP 5NB60 STP5NB60 STP5NB60FP

    Untitled

    Abstract: No abstract text available
    Text: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600V - 0.17Ω - 17A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJmax STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND


    Original     		PDF STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND O-220/FP/D2PAK/I2PAK/TO-247 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND O-220 O-220FP

    f21nm50n

    Abstract: W21NM50N P21NM50N F21NM50 IPAK marked code tc MOSFET MARKING STP N-Channel mosfet 400v 25A STMicroelectronics DIODE marking code st marking code
    Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V


    Original     		PDF STP/F21NM50N STW21NM50N STB21NM50N STB21NM50N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM50N STF21NM50N STP21NM50N f21nm50n W21NM50N P21NM50N F21NM50 IPAK marked code tc MOSFET MARKING STP N-Channel mosfet 400v 25A STMicroelectronics DIODE marking code st marking code

    F21NM50N

    Abstract: P21NM50N W21NM50N F21NM50 w21nm50 STW21NM50 P21NM50 STB21NM50N STB21NM50N-1 STF21NM50N
    Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V


    Original     		PDF STP/F21NM50N STW21NM50N STB21NM50N STB21NM50N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM50N STF21NM50N STP21NM50N F21NM50N P21NM50N W21NM50N F21NM50 w21nm50 STW21NM50 P21NM50 STB21NM50N-1 STF21NM50N

    F21NM50N

    Abstract: P21NM50N STF21NM50N W21NM50N F21NM50 STB21NM50
    Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features VDSS Type @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V


    Original     		PDF STP/F21NM50N STW21NM50N STB21NM50N STB21NM50N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM50N-1 STF21NM50N STP21NM50N F21NM50N P21NM50N W21NM50N F21NM50 STB21NM50

    P21NM50

    Abstract: F21NM50N P21NM50N W21NM50
    Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V


    Original     		PDF STP/F21NM50N STW21NM50N STB21NM50N STB21NM50N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM50N STF21NM50N STP21NM50N P21NM50 F21NM50N P21NM50N W21NM50

    STB23NM60N

    Abstract: 23nm60nd 23NM60N JESD97 STB23NM60ND STF23NM60ND STI23NM60ND STP23NM60ND STW23NM60ND
    Text: STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS (@Tjmax) STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND


    Original     		PDF STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND O-220/FP O-247 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND STB23NM60N 23nm60nd 23NM60N JESD97 STB23NM60ND STF23NM60ND STI23NM60ND STP23NM60ND STW23NM60ND

    F30NM60ND

    Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
    Text: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND


    Original     		PDF STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND O-220/FP/D2PAK/I2PAK/TO-247 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND O-220 O-220FP F30NM60ND 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND

    MOSFET MARKING STP

    Abstract: B21NM60N STF21NM60N
    Text: STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600V - 0.19Ω - 17A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N 650V


    Original     		PDF STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N O-220 O-220FP MOSFET MARKING STP B21NM60N

    f21nm60n

    Abstract: w21nm60n p21nm60n F21NM60 B21NM60N MOSFET MARKING STP STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N
    Text: STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600V - 0.17Ω - 17A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N 650V 650V


    Original     		PDF STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N O-220 O-220FP f21nm60n w21nm60n p21nm60n F21NM60 B21NM60N MOSFET MARKING STP STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N

    f21nm60n

    Abstract: F21NM60 w21nm60 P21NM60 W21NM60N
    Text: STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600V - 0.19Ω - 17A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N 650V


    Original     		PDF STP/F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 O-220/FP/D2/I2PAK/TO-247 STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N O-220 O-220FP f21nm60n F21NM60 w21nm60 P21NM60 W21NM60N

    an 503 hall sensor

    Abstract: A3506 Hall A3515 uv sensors for obstacle detection ups transformer winding formula hall 503 DT 2523 CORE FERRITE "Linear Hall-effect Sensor" transformer winding formula inductive slot sensor
    Text: Technical Paper STP 98-1 ‘NON-INTRUSIVE’ HALL-EFFECT CURRENT-SENSING TECHNIQUES APPLICATIONS INFORMATION ‘NON-INTRUSIVE’ HALL-EFFECT CURRENT-SENSING TECHNIQUES PROVIDE SAFE, RELIABLE DETECTION and PROTECTION for POWER ELECTRONICS by Paul Emerald Abstract


    Original     		PDF result470 an 503 hall sensor A3506 Hall A3515 uv sensors for obstacle detection ups transformer winding formula hall 503 DT 2523 CORE FERRITE "Linear Hall-effect Sensor" transformer winding formula inductive slot sensor

    an 503 hall sensor

    Abstract: schematic diagram induction heating hall effect current sensor ic obstacle detection sensors hall 506 ua motor power window hall sensor HEDS 1000 hall effect current sensor datasheet hall effect zero sensor hall effect sensor
    Text: Technical Paper STP 98-1* APPLICATIONS INFORMATION ‘NON-INTRUSIVE’ HALL-EFFECT CURRENT-SENSING TECHNIQUES PROVIDE SAFE, RELIABLE DETECTION and PROTECTION for POWER ELECTRONICS by Paul Emerald Abstract As systems extend and expand the exploitation of the latest


    Original     		PDF meth470 an 503 hall sensor schematic diagram induction heating hall effect current sensor ic obstacle detection sensors hall 506 ua motor power window hall sensor HEDS 1000 hall effect current sensor datasheet hall effect zero sensor hall effect sensor

    MOSFET 50V 100A

    Abstract: 4403 4403 transistor P channel MOSFET 10A SOP8 Package DIODE 76A 2535m STP4403
    Text: 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF STP4403 STP4403 -20V/-10 -20V/-8 -20V/-7 MOSFET 50V 100A 4403 4403 transistor P channel MOSFET 10A SOP8 Package DIODE 76A 2535m

    STP4407

    Abstract: mosfet 407 mosfet vgs 5v
    Text: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STP4407 STP4407 -30V/-12A, -30V/-10A, mosfet 407 mosfet vgs 5v

    25NM60ND

    Abstract: F25NM60ND
    Text: STP/F25NM60ND-STW25NM60ND STB25NM60ND-STI25NM60ND N-channel 600V - 0.13Ω - 21A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJMAX RDS(on) max 650 V 650 V 650 V 650 V 650 V < 0.16 Ω < 0.16 Ω


    Original     		PDF STP/F25NM60ND-STW25NM60ND STB25NM60ND-STI25NM60ND O-220/FP/D2PAK/I2PAK/TO-247 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND O-220 O-220FP 25NM60ND F25NM60ND

    Untitled

    Abstract: No abstract text available
    Text: 55 06 55 06 8 SGS-THOMSON iMnei ii@iiLiero iKines STP NE L STP NE LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E STP55N E06L S TP 55N E06LFP V dss R D S on Id 60 V 60 V < 0.022 Q. < 0.022 Q. 55 A 28 A . . TYPICAL RDs(on) = 0.018


    OCR Scan     		PDF STP55N E06LFP STP55NE06LFP O-22QFP

    5NA80FI

    Abstract: TP3NA80
    Text: £jï 3 80 3 80 SGS-THOMSON ULKgraMOeS STP NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V S TP3N A 80 STP3N A 80FI • . . . . . . dss 800 V 800 V RDS on < 4 .5 < 4 .5 Q. Q. Id 3.1 A 2 A TYPICAL RDS(on) = 3.5 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF

    P6nA60

    Abstract: 6na60 NA60FI
    Text: *57 TYPE STP6N A 60 STP6NA60FI . . . • ■ . ■ 6 60 6 60 SGS-THOMSON iLiOT !Q £I stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS(on Id 600 V 600 V < 1.2 a < 1.2 a 6.5 A 3.9 A TYPICAL R DS(on) = 1 Q ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP6NA60FI P6nA60 6na60 NA60FI

    Untitled

    Abstract: No abstract text available
    Text: * 5 4 60 4 60 SGS-THOMSON iL iO M K I 7 stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI • . . ■ ■ . ■ V dss R DS on Id 600 V 600 V < 2.2 a < 2.2 a 4.3 A 2.7 A TYPICAL RDS(on) = 1 -85 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP4NA60 STP4NA60FI

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 4 40 4 40 SGS-THOMSON ¡UÈTO « 7 STP NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP4N A 40 STP4N A 40FI V dss RDS on Id 400 V 400 V <20 <20 4 A 2.8 A . TYPICAL R Ds(on) = 1.7 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF ISQWATT220

    STP16NE06FI

    Abstract: STP16NE06 sc06140
    Text: 1 0 16 06 16 06 SGS- H M S N IM O ig œ iIL liera *® STP NE STP NE FI N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYP E V STP16N E06 STP1 6 N E 0 6 F I • . . . . . dss 60 V 60V R D S o n Id < 0 .12 Q. < 0 .12 Q. 16 11 A A TYPICAL R DS(on) = 0.09


    OCR Scan     		PDF STP16NE06 STP16NE06FI STP16NE06 6NE06FI O-220 ISOWATT220 P011C STP16NE06/FI ISOWATT22Q STP16NE06FI sc06140

    DIODE a40

    Abstract: No abstract text available
    Text: *57 4 40 4 40 SGS-THOMSON iL iO M K I TYPE STP4NA40 STP4N A40FI stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS on Id 400 V 400 V < 2a < 2a 4 A 2.8 A • T Y P IC A L Ros(on) = 1-7 . . ■ ■ . ■ ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP4NA40 A40FI DIODE a40

    Untitled

    Abstract: No abstract text available
    Text: STP80NS04Z N - CHANNEL CLAMPED 7.5mG - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP 80N S04Z V dss R d S o ii Id CLAM PED <0.008 Q. 80 A . TYPICAL RDs(on) = 0.0075 £2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION


    OCR Scan     		PDF STP80NS04Z O-220