P1013
Abstract: MOSFET 20V 45A SC89 SC-89 MOSFET P 950 STP1013
Text: P1013 ST STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
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STP1013
STP1013
OT-523
SC-89
520ohm
700ohm
P1013
MOSFET 20V 45A
SC89
SC-89
MOSFET P 950
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits
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XL24410
XL24810
XL2441ODS
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26BH
Abstract: STP03 STK 4144 application circuit SI002
Text: MICROELECTRONICS \_ J * Ê £re*//*nc* XL24E410 iflE* 4-Bit Microcontroller Emulator KEY FEATURES OVERVIEW • Low voltage, single power source V d d - 2.3 -5.5V ■ Memory — E2PROM for program (max.): 8192 x 8 bits — General-purpose RAM : 256 x 4 bits
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XL24E410
XL24E410DS
26BH
STP03
STK 4144 application circuit
SI002
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS Exc»Mine* in 6* XL24E805 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VD D -2.5~5.5V 8192 bytes ROM 256 x 4 bits general-purpose RAM
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XL24E805
300KHz
XL24E805DS
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POA11
Abstract: SI002 ADC04 H213 LCD03 marking CODE ck6 TMR02-0 ADC82 stp10
Text: W m*M MICROEL ECT RONI CS Exc»ll»nc8 in E* XL24805 Series 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VDD-2.0~5.5V 8192 X 8 bits ROM 256 x 4 bits general-purpose RAM
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XL24805
300KHz-2MHz
30KHz
50KHz
10jiA
30jiA
XL24805DS
POA11
SI002
ADC04
H213
LCD03
marking CODE ck6
TMR02-0
ADC82
stp10
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