Datasheet Archive: STP13N10LFI datasheets

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STMicroelectronics STP13N10LFI
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STP13N10LFI Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STP13N10LFI		STMicroelectronics	N-Channel Enhancement Mode Low Threshold Power MOS Transistor		Scan	PDF

STP13N10LFI Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STP13N10L Abstract: No abstract text available Text: STP13N10L STP13N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP13N10L STP13N10LFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.2 Ω < 0.2 Ω 13 A 9A TYPICAL RDS(on) = 0.16 Ω AVALANCHE RUGGEDNESS TECHNOLOGY	Original	STP13N10L STP13N10LFI 100oC O-220 ISOWATT220	PDF
da52 Abstract: No abstract text available Text: * 5 S G S -T H O M S O N ilLHCTIIMDe 7 s t p i 3N 1o l S T P 1 3 N 1 0 LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP13N10L STP13N10LFI V dss R DS on Id 100 V 100 V < o .2 a < o .2 a 13 A 9 A • TYPICAL RDS(on) = 0.16Q AVALANCHE RUGGEDNESS TECHNOLOGY	OCR Scan	STP13N10L STP13N10LFI da52	PDF
BT 13A Abstract: STP13N10L STP13N10LFI Text: S TP 13N 10L S T P 1 3 N 1 0 LFI S G S -T H O M S O N illO T C M D O N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP13N10L STP13N10LFI V dss R D S on Id 100 V 100 V < 0.2 Q < 0.2 £2 13 A 9 A . TYPICAL RDS(on) = 0.16 £1 AVALANCHE RUGGEDNESS TECHNOLOGY	OCR Scan	STP13N10L STP13N1OLFI STP13N10L STP13N10LFI P011C STP13N1 ISOWATT220 GG73457 BT 13A	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

STP13N10L

Abstract: No abstract text available
Text: STP13N10L STP13N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP13N10L STP13N10LFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.2 Ω < 0.2 Ω 13 A 9A TYPICAL RDS(on) = 0.16 Ω AVALANCHE RUGGEDNESS TECHNOLOGY

Original

STP13N10L STP13N10LFI 100oC O-220 ISOWATT220

PDF

da52

Abstract: No abstract text available
Text: * 5 S G S -T H O M S O N ilLHCTIIMDe 7 s t p i 3N 1o l S T P 1 3 N 1 0 LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP13N10L STP13N10LFI V dss R DS on Id 100 V 100 V < o .2 a < o .2 a 13 A 9 A • TYPICAL RDS(on) = 0.16Q AVALANCHE RUGGEDNESS TECHNOLOGY

OCR Scan

STP13N10L STP13N10LFI da52

PDF

BT 13A

Abstract: STP13N10L STP13N10LFI
Text: S TP 13N 10L S T P 1 3 N 1 0 LFI S G S -T H O M S O N illO T C M D O N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP13N10L STP13N10LFI V dss R D S on Id 100 V 100 V < 0.2 Q < 0.2 £2 13 A 9 A . TYPICAL RDS(on) = 0.16 £1 AVALANCHE RUGGEDNESS TECHNOLOGY