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    Untitled

    Abstract: No abstract text available
    Text: 712^237 D04b441 êST « S f i T H SCS-THOMSON iGÄ¥^@iO £S STP33N10 STP33N1OFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP33N 10 S TP33N 10FI • . . ■ ■ . . ■ V d ss RDS(on Id 100 V 100 V < 0 .0 6 £2 < 0 .0 6 n 33 A 18 A TYPICAL R D S (o n ) = 0.045 £i


    OCR Scan     		PDF D04b441 STP33N10 STP33N1O TP33N 7T2T237 D04b447 STP33N10/FI

    33N10

    Abstract: SGS Transistor
    Text: STP33N1o STP33N10FI SGS-THOMSON iLü «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N 10 STP33N 10FI V dss RDS on Id 100 V 0 .0 6 L i 33 A 100 V 0 .0 6 a 18 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STP33N1o STP33N10FI STP33N O-220 ISOWATT220 STP33N1 33N10 SGS Transistor