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Catalog Datasheet	MFG & Type	Document Tags	PDF
marking 52a Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking Text: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	STP3481 STP3481 -30V/-5 55m-ohm -30V/-4 75m-ohm marking 52a DIODE 30V TSOP DIODE S6 52a 6P marking	PDF

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marking 52a

Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking
Text: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

STP3481 STP3481 -30V/-5 55m-ohm -30V/-4 75m-ohm marking 52a DIODE 30V TSOP DIODE S6 52a 6P marking

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