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    Untitled

    Abstract: No abstract text available
    Text: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S TO-257 DEVICE TYPE PEAK VCE sen 70 5.0 40-120 1.0/2.0 2.4 5.0/0.5 STP3996 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1 STP3997 80 5.0 80-240 1.0/2.0 0.3 1.0/0.1 STP5660 200 5.0 40-120 0.5/5.0 1.0 2.0/0.4 STP5661


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    PDF O-257 STP2880 STP3996 STP3997 STP5660 STP5661 STP5664 STP5665 STP5427 STP5428

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


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    PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-257 DEVICE TYPE PEAK •c @ 'b 1.0/2.0 2.4 5.0/0.5 40-120 1.0/2.0 0.3 1.0/0.1 5.0 80-240 1.0/2.0 0.3 1.0/0.1 200 5.0 40-120 0.5/5.0 1.0 2.0/0.4 STP5661 300 5.0 25- 75 0.5/5.0 1.0 2.0/0.4 STP5664 200 10.0 40-120 1.0/5.0


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    PDF STP5664 STP5665 STP5427 STP5428 STP5429 STP5430 STP3997 STP3997 STP5660 STP2880