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    STP6N50FI Search Results

    STP6N50FI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP6N50FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP6N50FI STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Scan PDF

    STP6N50FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP6N50

    Abstract: STP6N50FI
    Text: STP6N50 STP6N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N50 STP6N50FI • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 1.1 Ω < 1.1 Ω 6A 3.8 A TYPICAL RDS(on) = 0.93 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF STP6N50 STP6N50FI 100oC O-220 ISOWATT220 STP6N50 STP6N50FI

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TIS37

    Abstract: P6N50
    Text: 004b312 D7ñ • S G T H SGS-THOMSON STP6N50 STP6N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Voss ■ ■ ■ . . Id A D £ R o S o n 500 V 500 V A TYPE STP6N 50 STP6N 50FI 6 A 3.8 A TYPICAL RDS(on) = 0.93 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF 004b312 STP6N50 STP6N50FI STP6N50 0G4b31b STP6N50/FI TIS37 P6N50

    STP6N50

    Abstract: STP6N50FI T0125 T04 transistor
    Text: G7â I ISGTH 7 “12*1237 0 0 4 b 3 1 2 STP6N50 STP6N50FI S C S -m O M S O N [L[l ïï[HMO gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N50 STP6N 50FI . • . . ■ V dss RüS(on Id 500 V 500 V < 1 .1 0 < 1.1 i l 6 A 3.8 A TYPICAL RDs(on) = 0.93 £2


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    PDF STP6N50 STP6N50FI STP6N50FI STP6N50/FI T0125 T04 transistor

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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