Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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STRH8N10
STRH8N10S1
DocID018504
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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STRH8N10
STRH8N10S1
DocID018504
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Untitled
Abstract: No abstract text available
Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STRH8N10STF3
STRH8N10STF1
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STRH8N10STF3
Abstract: No abstract text available
Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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STRH8N10STF3
100kRad
34Mev/cm
STRH8N10STF3
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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STRH8N10
STRH8N10S1
STRH8N10SG
DocID018504
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability
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STRH8N10
STRH8N10N1
STRH8N10NG
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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Original
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PDF
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STRH8N10
STRH8N10S1
DocID018504
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability
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Original
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STRH8N10
STRH8N10N1
STRH8N10NG
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Untitled
Abstract: No abstract text available
Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH8N10STF3
100kRad
34Mev/cm
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Untitled
Abstract: No abstract text available
Text: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH8N10STF1
STRH8N10STF3
100kRad
34Mev/cm
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability
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STRH8N10
STRH8N10N1
STRH8N10NG
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STRH8N10STF3
Abstract: STRH8N10 JESD97 mar 806
Text: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH8N10STF1
STRH8N10STF3
100kRad
34Mev/cm
STRH8N10STF3
STRH8N10
JESD97
mar 806
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