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    Untitled

    Abstract: No abstract text available
    Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original
    PDF STRH8N10STF3 STRH8N10STF1

    STRH8N10STF3

    Abstract: No abstract text available
    Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original
    PDF STRH8N10STF3 100kRad 34Mev/cm STRH8N10STF3

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original
    PDF STRH8N10STF3 100kRad 34Mev/cm

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original
    PDF STRH8N10STF1 STRH8N10STF3 100kRad 34Mev/cm

    STRH8N10STF3

    Abstract: STRH8N10 JESD97 mar 806
    Text: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original
    PDF STRH8N10STF1 STRH8N10STF3 100kRad 34Mev/cm STRH8N10STF3 STRH8N10 JESD97 mar 806