STU70N2LH5 Search Results

STU70N2LH5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STU70N2LH5		STMicroelectronics	N-channel 25 V, 0.006 O, 48 A - DPAK - IPAK STripFET V Power MOSFET		Original	PDF

STU70N2LH5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VDSS-25V Abstract: No abstract text available Text: STD70N2LH5 STU70N2LH5 N-channel 25 V - 0.006 Ω - 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A 3 3 • RDS(on) * Qg industry benchmark ■	Original	PDF	STD70N2LH5 STU70N2LH5 VDSS-25V
Untitled Abstract: No abstract text available Text: STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A ) s ( ct 3 3 • RDS(on) * Qg industry benchmark	Original	PDF	STD70N2LH5 STU70N2LH5
70N2LH5 Abstract: JESD97 STD70N2LH5 STU70N2LH5 ISD24 Text: STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)	Original	PDF	STD70N2LH5 STU70N2LH5 70N2LH5 JESD97 STD70N2LH5 STU70N2LH5 ISD24
STripFET Abstract: STD85N3LH5 STD60N3LH5 STD70N2LH5 STD95N2LH5 STL150N3LLH5 STL65N3LLH5 STS14N3LLH5 STU60N3LH5 STU70N2LH5 Text: STripFETTM V The latest DC-DC converters - more power per cubic inch STMicroelectronics’ latest proprietary STripFET technology delivers extremely low conduction and switching losses and achieves the lowest figure of merit FOM among comparable devices.	Original	PDF	FLSTRIP0308 STripFET STD85N3LH5 STD60N3LH5 STD70N2LH5 STD95N2LH5 STL150N3LLH5 STL65N3LLH5 STS14N3LLH5 STU60N3LH5 STU70N2LH5
STripFET Abstract: STD85N3LH5 STS14N3LLH5 44 LS 95 NC 1350 ls 7400 7400 ls STU60N3LH5 STD60N3LH5 STD50N03L Text: Power MOSFETs STripFETTM V STripFET V: main features Metal layer RMET reduction Sketch of STripFET V Structure METAL TEOS POLY SOURCE BODY Drain engineering REPI reduction Enhan. DE Double gate oxide thickness Qg reduction DE Vertical contact µ-Trench Rch reduction	Original	PDF	STD85N3LH5 STU70N2LH5* STU95N2LH5* STU60N3LH5 STU85N3LH5 STL65N3LLH5 STL150N3LLH5 STK25N3LLH5^ STK38N3LLH5^ STripFET STD85N3LH5 STS14N3LLH5 44 LS 95 NC 1350 ls 7400 7400 ls STU60N3LH5 STD60N3LH5 STD50N03L
STY112N65M5 Abstract: STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST Text: Power MOSFETs Selection guide February 2009 www.st.com/pmos Ordering information Technology digits may be placed also at the end of the part number. 300 500 600 650 0.09 0.05 0.054 0.085 0.115 0.14 0.19 0.26 0.32 0.38 0.56 0.78 0.035 0.06 0.088 0.13 0.165	Original	PDF	STP30NM30N STE70NM50 STW55NM50N STW43NM50N STx30NM50N STx25NM50Ny STx21NM50Ny STx16NM50Ny STx13NM50Ny STx12NM50N STY112N65M5 STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST