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STMicroelectronics STW54NM65ND MOSFET N-CH 650V 49A TO247-3
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STW54NM65N Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STW54NM65N		STMicroelectronics	N-channel 600 V, 0.054 O - 50 A - TO-247 second generation MDmesh Power MOSFET		Original	PDF
STW54NM65ND		STMicroelectronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 59A TO-247		Original	PDF

STW54NM65N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STW54NM65N Abstract: No abstract text available Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3	Original	PDF	STW54NM65N O-247 STW54NM65N
54NM65ND Abstract: No abstract text available Text: STW54NM65ND N-channel 650 V, 0.055 Ω typ., 49 A FDmesh II Power MOSFET with fast diode in a TO-247 package Datasheet — production data Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the	Original	PDF	STW54NM65ND O-247 O-247 54NM65ND
STW54NM65N Abstract: No abstract text available Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 TO-247	Original	PDF	STW54NM65N O-247 STW54NM65N
Untitled Abstract: No abstract text available Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID 710 V < 0.065 Ω 50 A ) s ( t c u d o ) r s ( P t Application c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o )	Original	PDF	STW54NM65N O-247 STW54NM65N
54NM65ND Abstract: No abstract text available Text: STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices	Original	PDF	STW54NM65ND O-247 O-247 54NM65ND
JESD97 Abstract: STW54NM65N Text: STW54NM65N N-channel 600 V, 0.054 Ω - 50 A - TO-247 second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge	Original	PDF	STW54NM65N O-247 JESD97 STW54NM65N
STx30NM50N Abstract: D2PAK D2Pak Package st 247 STW14NM65N STW19NM65N STW24NM65N STW54NM65N STW55NM50N STW55NM60N Text: MDmesh II and FDmesh™ II Innovative high-current devices for high-efficiency power converters STMicroelectronics has recently introduced an extensive broad-ranging portfolio using our new high-current super-junction power MOSFETs, which address new higher-efficiency requirements. The innovative 600 V	Original	PDF	Max247 FLMDMESH0708 STx30NM50N D2PAK D2Pak Package st 247 STW14NM65N STW19NM65N STW24NM65N STW54NM65N STW55NM50N STW55NM60N
STY112N65M5 Abstract: STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST Text: Power MOSFETs Selection guide February 2009 www.st.com/pmos Ordering information Technology digits may be placed also at the end of the part number. 300 500 600 650 0.09 0.05 0.054 0.085 0.115 0.14 0.19 0.26 0.32 0.38 0.56 0.78 0.035 0.06 0.088 0.13 0.165	Original	PDF	STP30NM30N STE70NM50 STW55NM50N STW43NM50N STx30NM50N STx25NM50Ny STx21NM50Ny STx16NM50Ny STx13NM50Ny STx12NM50N STY112N65M5 STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST