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    SUD19P Price and Stock

    Vishay Siliconix SUD19P06-60-GE3

    MOSFET P-CH 60V 18.3A TO252
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    DigiKey SUD19P06-60-GE3 Cut Tape 59,547 1
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    SUD19P06-60-GE3 Digi-Reel 59,547 1
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    SUD19P06-60-GE3 Reel 58,000 2,000
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    RS SUD19P06-60-GE3 Bulk 2,000
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    New Advantage Corporation SUD19P06-60-GE3 24,000 1
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    Vishay Siliconix SUD19P06-60L-E3

    MOSFET P-CH 60V 19A TO252
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    DigiKey SUD19P06-60L-E3 Digi-Reel 21,277 1
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    SUD19P06-60L-E3 Cut Tape 21,277 1
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    SUD19P06-60L-E3 Reel 20,000 2,000
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    Vishay Siliconix SUD19P06-60-BE3

    MOSFET P-CH 60V 18.3A DPAK
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    DigiKey SUD19P06-60-BE3 Digi-Reel 5,739 1
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    SUD19P06-60-BE3 Cut Tape 5,739 1
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    SUD19P06-60-BE3 Reel 2,000 2,000
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    Vishay Siliconix SUD19P06-60-E3

    MOSFET P-CH 60V 18.3A TO252
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    DigiKey SUD19P06-60-E3 Cut Tape 3,558 1
    • 1 $1.37
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    SUD19P06-60-E3 Digi-Reel 3,558 1
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    SUD19P06-60-E3 Reel 2,000 2,000
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    New Advantage Corporation SUD19P06-60-E3 8,000 1
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    Vishay Intertechnologies SUD19P06-60-GE3

    P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SUD19P06-60-GE3)
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    Avnet Americas SUD19P06-60-GE3 Reel 8,000 13 Weeks 2,000
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    Mouser Electronics SUD19P06-60-GE3 21,850
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    Verical SUD19P06-60-GE3 3,522 68
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    SUD19P06-60-GE3 2,000 2,000
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    Arrow Electronics SUD19P06-60-GE3 2,000 13 Weeks 2,000
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    SUD19P06-60-GE3 2,000 13 Weeks 2,000
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    SUD19P06-60-GE3 Cut Strips 9 13 Weeks 1
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    Newark SUD19P06-60-GE3 Cut Tape 6,668 5
    • 1 $0.8
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    SUD19P06-60-GE3 Reel 2,000
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    Bristol Electronics SUD19P06-60-GE3 30
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    TTI SUD19P06-60-GE3 Reel 26,000 2,000
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    TME SUD19P06-60-GE3 1,555 1
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    Chip 1 Exchange SUD19P06-60-GE3 2,444
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    Avnet Asia SUD19P06-60-GE3 15 Weeks 2,000
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    Chip1Stop SUD19P06-60-GE3 Cut Tape 3,522
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    EBV Elektronik SUD19P06-60-GE3 14 Weeks 2,000
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    SUD19P Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD19P06-60-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 18.3A TO252 Original PDF
    SUD19P06-60-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 18.3A TO-252 Original PDF
    SUD19P06-60L Vaishali Semiconductor P-Channel 60-V (D-S) 175C MOSFET Original PDF
    SUD19P06-60L-E3 Vishay Transistor Mosfet P-CH 60V 19A 3TO-252 Original PDF

    SUD19P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUD19P06-60-E3

    Abstract: SUD19P06-60
    Text: New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT


    Original     		PDF SUD19P06-60 O-252 SUD19P06-60-E3 18-Jul-08 SUD19P06-60-E3 SUD19P06-60

    9327

    Abstract: transistor M 9741 AN609 SUD19P06-60
    Text: SUD19P06-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD19P06-60 AN609 04-Sep-07 9327 transistor M 9741

    SUD19P06-60L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD19P06-60L S-52635Rev. 02-Jan-06 SUD19P06-60L

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD19P06-60 www.vishay.com Vishay Siliconix P-Channel 60 V D-S 150 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD19P06-60 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD19P06-60 2002/95/EC O-252 SUD19P06-60-E3 SUD19P06-60-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SUD19P06-60

    Abstract: No abstract text available
    Text: SPICE Device Model SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S 150°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD19P06-60 18-Jul-08 SUD19P06-60

    Untitled

    Abstract: No abstract text available
    Text: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD19P06-60 2002/95/EC O-252 SUD19P06-60-E3 SUD19P06-60-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    p-channel mosfet

    Abstract: SUD19P06-60L
    Text: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD19P06-60L 29-Sep-04 p-channel mosfet SUD19P06-60L

    Untitled

    Abstract: No abstract text available
    Text: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD19P06-60 2002/95/EC O-252 SUD19P06-60-E3 SUD19P06-60-GE3 11-Mar-11

    4376051

    Abstract: 7443 AN609 SUD19P06-60L
    Text: SUD19P06-60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD19P06-60L AN609 29-Aug-07 4376051 7443

    SUD19P06-60L

    Abstract: SUD19P06-60L-E3 SUD19P
    Text: New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 Qg (Typ) • TrenchFET Power MOSFET • 175 °C Junction Temperature


    Original     		PDF SUD19P06-60L O-252 SUD19P06-60L-E3 18-Jul-08 SUD19P06-60L SUD19P06-60L-E3 SUD19P

    Untitled

    Abstract: No abstract text available
    Text: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD19P06-60 2002/95/EC O-252 SUD19P06-60-E3 SUD19P06-60-GE3 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    SUD19P06-60

    Abstract: No abstract text available
    Text: New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT


    Original     		PDF SUD19P06-60 O-252 SUD19P06-60-E3 08-Apr-05 SUD19P06-60

    Untitled

    Abstract: No abstract text available
    Text: SUD19P06-60L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.060 @ VGS = −10 V −19 0.077 @ VGS = −4.5 V −16.8 D TrenchFETr Power MOSFET D 175_C Junction Temperature Qg (Typ)


    Original     		PDF SUD19P06-60L O-252 SUD19P06-60L--E3 S-41821--Rev. 11-Oct-04

    SUD19P06-60L

    Abstract: SUD19P
    Text: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD19P06-60L 18-Jul-08 SUD19P06-60L SUD19P

    SUD19P06-60L

    Abstract: SUD19P06-60L-E3
    Text: New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 Qg (Typ) • TrenchFET Power MOSFET • 175 °C Junction Temperature


    Original     		PDF SUD19P06-60L O-252 SUD19P06-60L-E3 08-Apr-05 SUD19P06-60L SUD19P06-60L-E3

    SUD19P06-60L

    Abstract: SUD19P06 41821
    Text: SUD19P06-60L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.060 @ VGS = −10 V −19 0.077 @ VGS = −4.5 V −16.8 D TrenchFETr Power MOSFET D 175_C Junction Temperature Qg (Typ)


    Original     		PDF SUD19P06-60L O-252 SUD19P06-60L--E3 S-41821--Rev. 11-Oct-04 SUD19P06-60L SUD19P06 41821

    LTC4000-1

    Abstract: comparator battery solar charger pmos N02N1002J LTC4001-1 wind turbine mppt Charge Controller design and ic Solar Charge Controller mppt ic LTC4000 Solar Charge Controller driver circuits solar cell LiFePO4 charger ic for Solar Power MPPT Controller
    Text: LTC4000-1 High Voltage High Current Controller for Battery Charging with Maximum Power Point Control Description Features Maximum Power Control: Solar Panel Input Compatible n Complete High Performance Battery Charger When Paired with a DC/DC Converter n Wide Input and Output Voltage Range: 3V to 60V


    Original     		PDF LTC4000-1 LTC4000, LTC3780 DFN-12 MSOP-12 LT3650 LTC4008, QFN-20 comparator battery solar charger pmos N02N1002J LTC4001-1 wind turbine mppt Charge Controller design and ic Solar Charge Controller mppt ic LTC4000 Solar Charge Controller driver circuits solar cell LiFePO4 charger ic for Solar Power MPPT Controller

    "Zener Diode 0805"

    Abstract: LM3423 SUD40N10-25 TP10 zener diode 0805 MMBT3904LT1G high voltage resistor
    Text: National Semiconductor Application Note 1872 Matthew Reynolds December 8, 2008 Introduction Standard Evaluation Board Operating Configuration • fSW = 600 kHz • Over-voltage protection set at 42V • VIN range 4.5V to 35V • Low side PWM fast dimming • 2 to 8 series connected LEDs VO < 35V


    Original     		PDF LM3423 AN-1872 "Zener Diode 0805" SUD40N10-25 TP10 zener diode 0805 MMBT3904LT1G high voltage resistor

    piezo injector

    Abstract: Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512
    Text: Diesel ECU and Fuel Injector Drivers Table of Contents CAN-BUS, ESD Protection. 3 CAN-BUS, ISO9141 Bus Transceiver. 4


    Original     		PDF ISO9141 O-277A 0V-50VDC; SM5A27HE3 DO-218AB SM8A27HE3 piezo injector Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512

    RC1206JR-072RL

    Abstract: digital p channel mosfet sot-23 fairchild LM3423MH LM3423 SUD40N10-25 TP10 22-28-4023 Initio ERJL12KF10CU 174-K
    Text: National Semiconductor Application Note 1872 Matthew Reynolds September 5, 2008 Introduction Standard Evaluation Board Operating Configuration • fSW = 600 kHz • Over-voltage protection set at 42V • VIN range 4.5V to 35V • Low side PWM fast dimming


    Original     		PDF LM3423 AN-1872 RC1206JR-072RL digital p channel mosfet sot-23 fairchild LM3423MH SUD40N10-25 TP10 22-28-4023 Initio ERJL12KF10CU 174-K

    LTC4000GN

    Abstract: N02N1002J si7135 Si7135DP LTC4000 battery charger 48v 10A LT3845A LTC4000EGN L6568 SiR4840BDY
    Text: LTC4000 High Voltage High Current Controller for Battery Charging and Power Management Description Features Complete High Performance Battery Charger When Paired with a DC/DC Converter n Wide Input and Output Voltage Range: 3V to 60V n Input Ideal Diode for Low Loss Reverse Blocking


    Original     		PDF LTC4000 28-Lead LT3650 LT3652/LT3652HV LTC4009 LTC4008, QFN-20 LTC4012 LTC4009 LT3741 LTC4000GN N02N1002J si7135 Si7135DP LTC4000 battery charger 48v 10A LT3845A LTC4000EGN L6568 SiR4840BDY

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Vm-10V

    Abstract: TMCM-1110 STEPROCKER
    Text: POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC262 DATASHEET Universal, cost-effective stepper driver for two-phase bipolar motors with state-of-the-art features. External MOSFETs fit different motor sizes. With Step/Dir Interface and SPI. APPLICATIONS


    Original     		PDF TMC262 TMC260] TMC261] TMC262-EVAL] TMC32NP-PSO] TMC34NP-PSO] TMC260/261 TMC262-EVAL Vm-10V TMCM-1110 STEPROCKER