Untitled
Abstract: No abstract text available
Text: SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features Low drain-source On-resistance: RDS on =24mΩ @VGS=10V, ID=2.9A Low gate charge: Qg=79.5nC (Typ.) High power and current handing capability Lead free product is acquired
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SUF1002
13-MAR-13
KSD-T7F001-001
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Untitled
Abstract: No abstract text available
Text: SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features Low drain-source On-resistance: RDS on =24mΩ @VGS=10V, ID=2.9A Low gate charge: Qg=79.5nC (Typ.) High power and current handing capability Lead free product is acquired
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SUF1002
29-OCT-13
KSD-T7F001-001
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SUF1002
Abstract: No abstract text available
Text: SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features • • • • Low Low Low Low Crss : Crss=36pF Typ. gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=24mΩ(Typ.) VGS(th) : VGS(th)=1.0~3.0V
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SUF1002
KSD-T7F001-000
SUF1002
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Untitled
Abstract: No abstract text available
Text: Preliminary SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features • • • • Low Low Low Low Crss : Crss=36pF Typ. gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=30mΩ(Max.)
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SUF1002
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
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