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    Vishay Siliconix SUM90N08-7M6P-E3

    MOSFET N-CH 75V 90A TO263
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    DigiKey SUM90N08-7M6P-E3 Reel 800
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    Vishay Siliconix SUM90N08-6M2P-E3

    MOSFET N-CH 75V 90A TO263
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    DigiKey SUM90N08-6M2P-E3 Digi-Reel 1
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    SUM90N08-6M2P-E3 Cut Tape
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    Vishay Siliconix SUM90N08-4M8P-E3

    MOSFET N-CH 75V 90A TO263
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    DigiKey SUM90N08-4M8P-E3 Digi-Reel 1
    • 1 $2.88
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    SUM90N08-4M8P-E3 Cut Tape
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    Quest Components SUM90N08-4M8P-E3 746
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    Vishay Intertechnologies SUM90N08-4M8P-E3

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    Bristol Electronics SUM90N08-4M8P-E3 740
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    Component Electronics, Inc SUM90N08-4M8P-E3 423
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    Others SUM90N08-4M8P-E3

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    Chip 1 Exchange SUM90N08-4M8P-E3 7,200
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    SUM90N08-4M8P-E3 7,200
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    SUM90N08 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUM90N08-4M8P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF
    SUM90N08-6M2P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF
    SUM90N08-7M6P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF

    SUM90N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N08-6m2P 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUM90N08

    Abstract: 4A88
    Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		PDF SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 18-Jul-08 SUM90N08 4A88

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    QG60

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N08-7m6P 18-Jul-08 QG60

    uaa70

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 08-Apr-05 uaa70

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature


    Original     		PDF SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 11-Mar-11

    SUM90N08-6m2P-E3

    Abstract: mosfet SOA testing
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 11-Mar-11 SUM90N08-6m2P-E3 mosfet SOA testing

    90d marking

    Abstract: No abstract text available
    Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature


    Original     		PDF SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 08-Apr-05 90d marking

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 08-Apr-05

    SUM90N08-4M8P-E3

    Abstract: No abstract text available
    Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		PDF SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 08-Apr-05 SUM90N08-4M8P-E3

    SUM90N08

    Abstract: No abstract text available
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 18-Jul-08 SUM90N08

    SUM90N08

    Abstract: AN609
    Text: SUM90N08-4m8P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N08-4m8P AN609 08-Nov-07 SUM90N08

    mosfet 4842

    Abstract: AN609 SUM90N08
    Text: SUM90N08-7m6P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N08-7m6P AN609 19-Oct-07 mosfet 4842 SUM90N08

    7447

    Abstract: 8807 pdf 7447 AN609 SUM90N08
    Text: SUM90N08-6m2P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N08-6m2P AN609 18-Sep-07 7447 8807 pdf 7447 SUM90N08

    SUM90N08-4M8P-E3

    Abstract: No abstract text available
    Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		PDF SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 18-Jul-08 SUM90N08-4M8P-E3

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS