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    SUP85N15 Search Results

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    SUP85N15 Price and Stock

    Vishay Siliconix SUP85N15-21-E3

    MOSFET N-CH 150V 85A TO220AB
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    DigiKey SUP85N15-21-E3 Tube 500
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    Vishay Intertechnologies SUP85N15-21-E3

    Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SUP85N15-21-E3)
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    Avnet Americas SUP85N15-21-E3 Tube 21 Weeks 500
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    Mouser Electronics SUP85N15-21-E3 934
    • 1 $5.1
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    Verical SUP85N15-21-E3 503 3
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    SUP85N15-21-E3 73 3
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    SUP85N15-21-E3 50 13
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    Arrow Electronics SUP85N15-21-E3 503 21 Weeks 1
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    SUP85N15-21-E3 73 21 Weeks 1
    • 1 $0.4948
    • 10 $0.4934
    • 100 $0.4896
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    Newark SUP85N15-21-E3 Bulk 500
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    TTI SUP85N15-21-E3 Tube 2,500 50
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    TME SUP85N15-21-E3 1
    • 1 $4.67
    • 10 $4.2
    • 100 $3.71
    • 1000 $3
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    Chip1Stop SUP85N15-21-E3 Cut Tape 50
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    EBV Elektronik SUP85N15-21-E3 22 Weeks 50
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    Vishay Huntington SUP85N15-21-E3

    MOSFET N-CH 150V 85A TO220AB
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    Win Source Electronics SUP85N15-21-E3 1,644
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    • 100 $2.7591
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    SUP85N15 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP85N15-21 Vishay Siliconix MOSFETs Original PDF
    SUP85N15-21-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 85A TO220AB Original PDF
    SUP85N15-21 SPICE Device Model Vishay N-Channel 150-V (D-S) 175°C MOSFET Original PDF

    SUP85N15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUP85N15-21

    Abstract: sup85n15 SUP85N15-21-E3
    Text: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch


    Original
    PDF SUP85N15-21 O-220AB SUP85N15-21-E3 08-Apr-05 SUP85N15-21 sup85n15 SUP85N15-21-E3

    SUP85N15-21-E3

    Abstract: SUP85N15-21 SUP85N1521E3
    Text: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch


    Original
    PDF SUP85N15-21 O-220AB SUP85N15-21-E3 18-Jul-08 SUP85N15-21-E3 SUP85N15-21 SUP85N1521E3

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP85N15-21 www.vishay.com Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SUP85N15-21 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP85N15-21

    Abstract: No abstract text available
    Text: SUP85N15-21 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.021 @ VGS = 10 V 85 APPLICATIONS D Primary Side Switch D Automotive


    Original
    PDF SUP85N15-21 O-220AB S-21715--Rev. 07-Oct-02 SUP85N15-21

    SUP85N15-21

    Abstract: No abstract text available
    Text: SPICE Device Model SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF SUP85N15-21 18-Jul-08 SUP85N15-21

    4746 diode

    Abstract: SUP85N15-21 s7621
    Text: SPICE Device Model SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF SUP85N15-21 S-51883Rev. 12-Sep-05 4746 diode SUP85N15-21 s7621

    4746 diode

    Abstract: sup85n15 SUP85N15-21 n-channel, 75v, 50a 70319
    Text: SPICE Device Model SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF SUP85N15-21 0-to10V feedbac50 23-Nov-02 4746 diode sup85n15 SUP85N15-21 n-channel, 75v, 50a 70319

    AN609

    Abstract: SUP85N15-21
    Text: SUP85N15-21_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF SUP85N15-21 AN609 03-Jan-08

    Untitled

    Abstract: No abstract text available
    Text: SUP85N15-21 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.021 @ VGS = 10 V 85 APPLICATIONS D Primary Side Switch D Automotive


    Original
    PDF SUP85N15-21 O-220AB 08-Apr-05

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    sum45n25

    Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
    Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)


    Original
    PDF VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original
    PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04