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Catalog Datasheet	MFG & Type	PDF	Document Tags
SVD2N60F Abstract: SVD4N60 Text: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored	Original	PDF	SVD2N60M/SVD2N60F O-251-3L O-220F-3L SVD2N60F SVD4N60
SVD2N60F Abstract: svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A600V 2A-600V TO-251-3L 13105 SVD2N Text: SVD2N60M/F/T/D 2A600V N沟道增强型场效应管描述 SVD2N60M/F/T/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品	Original	PDF	SVD2N60M/F/T/D 2A600V SVD2N60M/F/T/D 2A600VRDS SVD2N60M O-251-3L SVD2N60F O-220F-3L SVD2N60F svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A-600V TO-251-3L 13105 SVD2N

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SVD2N60F

Abstract: SVD4N60
Text: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Original

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SVD2N60M/SVD2N60F O-251-3L O-220F-3L SVD2N60F SVD4N60

SVD2N60F

Abstract: svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A600V 2A-600V TO-251-3L 13105 SVD2N
Text: SVD2N60M/F/T/D 2A600V N沟道增强型场效应管描述 SVD2N60M/F/T/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品

Original

PDF

SVD2N60M/F/T/D 2A600V SVD2N60M/F/T/D 2A600VRDS SVD2N60M O-251-3L SVD2N60F O-220F-3L SVD2N60F svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A-600V TO-251-3L 13105 SVD2N