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    SW SPDT 6PIN Search Results

    SW SPDT 6PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    IH5143MJE/883B Rochester Electronics LLC SPDT, 2 Func, 1 Channel, CMOS, CDIP16, Visit Rochester Electronics LLC Buy
    DG303A/BDA Rochester Electronics LLC DG303A - SPDT, 2 Func, 1 Channel, CMOS Visit Rochester Electronics LLC Buy
    DG188AA Rochester Electronics LLC SPDT, 1 Func, 1 Channel, MBCY10, PACKAGE-10 Visit Rochester Electronics LLC Buy
    DG301A/BIA Rochester Electronics DG301A - SPDT, 1 Func, CMOS - Dual marked (M38510/11602BIA) Visit Rochester Electronics Buy
    DG303A/BCA Rochester Electronics LLC DG303A - SPDT, 2 Func, CMOS - Dual marked (M38510/11604BCA) Visit Rochester Electronics LLC Buy

    SW SPDT 6PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1658 NEC

    Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT PDF

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


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    R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02 PDF

    2SC5508

    Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


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    R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A PDF

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,


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    UPG168TB HS350 PDF

    SW SPDT 6pin

    Abstract: UPG168TB-E4 VP215 HS350 UPG168TB
    Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,


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    UPG168TB UPG168TB HS350 SW SPDT 6pin UPG168TB-E4 VP215 HS350 PDF

    SW SPDT 6pin

    Abstract: Marking G3A HS350 UPG2012TB UPG2012TB-E3 VP215 F MARKING 6PIN
    Text: NEC's ¼W SINGLE CONTROL UPG2012TB L-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.


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    UPG2012TB UPG2012TB HS350 SW SPDT 6pin Marking G3A HS350 UPG2012TB-E3 VP215 F MARKING 6PIN PDF

    SW SPDT 6pin

    Abstract: HS350 UPG2012TB VP215 UPG2012TB-E3-A
    Text: NEC's ¼W SINGLE CONTROL UPG2012TB L-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY voltage: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.


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    UPG2012TB UPG2012TB HS350 SW SPDT 6pin HS350 VP215 UPG2012TB-E3-A PDF

    SW SPDT 6pin

    Abstract: UPG2012TK UPG2012TK-E2 VP215 HS350 Marking g3h MMIC s-band
    Text: NEC's ¼ W SINGLE CONTROL UPG2012TK L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TK is a single control GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications.


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    UPG2012TK UPG2012TK HS350 SW SPDT 6pin UPG2012TK-E2 VP215 HS350 Marking g3h MMIC s-band PDF

    SW SPDT 6pin

    Abstract: HS350 UPG2012TK UPG2012TK-E2 VP215 F MARKING 6PIN
    Text: NEC's ¼ W SINGLE CONTROL UPG2012TK L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TK is a single control GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications.


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    UPG2012TK UPG2012TK HS350 SW SPDT 6pin HS350 UPG2012TK-E2 VP215 F MARKING 6PIN PDF

    SW SPDT 6pin

    Abstract: HS350 UPG168TB UPG168TB-E4 VP215 MARKING G2t
    Text: DATA SHEET NEC's L, S-BAND SPDT SWITCH FEATURES DESCRIPTION NEC's UPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.)


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    UPG168TB UPG168TB HS350 SW SPDT 6pin HS350 UPG168TB-E4 VP215 MARKING G2t PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


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    2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 PDF

    PG2009TB

    Abstract: spdt mark s22
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion


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    PG2009TB PG2009TB PG10191EJ02V0DS spdt mark s22 PDF

    UPG2030TK

    Abstract: SW SPDT 6pin UPG2030TK-A HS350 UPG2030TK-E2-A VP215
    Text: DATA SHEET NEC's 1 W UPG2030TK ULTRA SMALL SPDT SWITCH FEATURES DESCRIPTION • NEC's UPG2030TK is a GaAs MMIC L, S-band SPDT Single Pole Double Throw switch for mobile phone and L, S-band applications. SWITCH CONTROL VOLTAGE: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)


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    UPG2030TK UPG2030TK HS350 SW SPDT 6pin UPG2030TK-A HS350 UPG2030TK-E2-A VP215 PDF

    UPG158TB

    Abstract: UPG158TB-E3 VP215 HS350
    Text: NEC's ½W UPG158TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and


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    UPG158TB UPG158TB HS350 UPG158TB-E3 VP215 HS350 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


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    UPG2009TB IR260 VP215 WS260 HS350 PDF

    marking g2u

    Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
    Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


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    UPG2009TB UPG2009TB HS350 marking g2u SW SPDT 6pin VP215 HS350 UPG2009TB-E3 California Eastern Laboratories gaas fet 4w PDF

    SW SPDT 6pin

    Abstract: HS350 UPG2010TB VP215
    Text: NEC's HIGH POWER SINGLE CONTROL UPG2010TB L-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2010TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.


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    UPG2010TB UPG2010TB HS350 SW SPDT 6pin HS350 VP215 PDF

    AX338

    Abstract: MAX3967
    Text: Quad, C om plem entary CMOS Sw itch A/l/PAlsVi UAX4515 iN1 _ T j 6 j IN2 01GE i l l 02 si [I y Can Be Used as a SPDT or SPST The MAX4613 CMOS analog sw itch h a s two norm ally closed (NC a n d two norm ally open (NO) sw itches. T his v ersatile device c a n be configured a s two


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    MAX4613 MAX46 AX338 MAX3967 PDF

    HS350

    Abstract: No abstract text available
    Text: DATA SHEET CEL GaAs INTEGRATED CIRCUIT «PG2030TK L, S-BAND SPDT SWITCH <R> DESCRIPTION T h e ^P G 2 0 3 0 T K is a G aA s M M IC L, S -ba nd S P D T S in g le Pole Double T hrow sw itch fo r m ob ile phone and o th e r L, S -ba nd applications. T h is de vice can o p era te w ith dual control volta ge s from 2.7 to 5.3 V, at fre q u e n cie s from 0.5 to 2.5 G Hz, with


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    PG2030TK PG2030TK HS350 PDF

    ic 4541

    Abstract: N02 SOT23 CMOS 4541 4HC4066 74HC4066A X4610
    Text: ^lO O Q , Quad SPST Switches in QSOP Improve the Industry Standard Guaranteed Operation from +2V to + 12V The new M A X4610/M A X4611/M A X4612 are low-voltage, quad, single-pole/single-throw SPST CMOS sw itches. The M A X4610’s sw itches are norm ally open (NO), the M A X4611’s sw itches are


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    X4610/M X4611/M X4612 X4610 X4611 MAX4612 AX461! X4542) MAX4543) ic 4541 N02 SOT23 CMOS 4541 4HC4066 74HC4066A PDF