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    California Eastern Laboratories (CEL) UPG2009TB-A

    IC RF SWITCH SPDT 2.5GHZ 6-SMINI
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    California Eastern Laboratories (CEL) UPG2009TB-E3-A

    IC RF SWITCH SPDT 2.5GHZ 6-SMINI
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    California Eastern Laboratories (CEL) UPG2009TB-EVAL

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    California Eastern Laboratories (CEL) UPG2009TB-EVAL-A

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    NEC Electronics Group UPG2009TB-E3

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    Quest Components UPG2009TB-E3 400
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    UPG2009TB Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPG2009TB NEC NECs L, S-BAND 4W SPDT SWITCH Original PDF
    UPG2009TB NEC Original PDF
    UPG2009TB-A California Eastern Laboratories RF Switches, RF/IF and RFID, IC RF SWITCH SPDT 6-SMINI Original PDF
    UPG2009TB-E3 NEC l,S-band 4W SPDT switch. Original PDF
    uPG2009TB-E3 NEC SPDT Switch, L-BAND High Power SPDT Switch, Tape And Reel Original PDF
    UPG2009TB-E3-A California Eastern Laboratories L, S-Band HIGH POWER SPDT SWITCH Original PDF
    UPG2009TB-EVAL California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPG2009TB Original PDF
    UPG2009TB-EVAL-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPG2009TB Original PDF

    UPG2009TB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz


    Original     		PDF UPG2009TB UPG2009TB

    Untitled

    Abstract: No abstract text available
    Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


    Original     		PDF UPG2009TB BluetoothT60 IR260 VP215 WS260 HS350

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz


    Original     		PDF UPG2009TB UPG2009TB

    marking g2u

    Abstract: SW sot-363
    Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz


    Original     		PDF UPG2009TB UPG2009TB UPG2009TB-E3 marking g2u SW sot-363

    Untitled

    Abstract: No abstract text available
    Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


    Original     		PDF UPG2009TB IR260 VP215 WS260 HS350

    marking g2u

    Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
    Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


    Original     		PDF UPG2009TB UPG2009TB HS350 marking g2u SW SPDT 6pin VP215 HS350 UPG2009TB-E3 California Eastern Laboratories gaas fet 4w

    UPG2009TB-A

    Abstract: SW SPDT 6pin UPG2009TB HS350 UPG2009TB-E3-A VP215
    Text: NEC's L, S-Band HIGH POWER UPG2009TB SPDT Switch FEATURES DESCRIPTION • • • • NEC's UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion


    Original     		PDF UPG2009TB UPG2009TB UPG2009TB-A SW SPDT 6pin HS350 UPG2009TB-E3-A VP215

    UPG2176T5N

    Abstract: UPG2179TB UPG2010TB 29dBm UPG2009TB UPG2214TB UPG2214TK UPD5713TK UPG2012TB UPG2030TK
    Text: www.cel.com NEC RFIC Switches GaAs SPDT Dual Control Switches TYPICAL ELECTRICAL CHARACTERISTICS TA = 25°C Frequency range: 0.1 to 2.5 GHz Part Number Features UPG2009TB Control Voltages (V) High Power/High Linearity UPG2030TK Great Performance, 1 Watt


    Original     		PDF UPG2009TB UPG2030TK UPG2151T5K UPG2158T5K UPG2179TB UPG2176T5N UPG2179TB UPG2010TB 29dBm UPG2009TB UPG2214TB UPG2214TK UPD5713TK UPG2012TB

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    PG2009TB

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L- BAND High Power SPDT Switch DESCRIPTION μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500MHz to 2.5GHz, having


    Original     		PDF PG2009TB PG2009TB 500MHz 34dBm

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    PG2009TB

    Abstract: spdt mark s22
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion


    Original     		PDF PG2009TB PG2009TB PG10191EJ02V0DS spdt mark s22

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

    Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: APRIL2008 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com NEW SYNTHESIZED SIGNAL GENERATOR OFFERS LOW COST, HIGH VALUE INSIDE THIS ISSUE: Transmission Lines on Ion-Implanted Silicon Wafers Spatial Combining of Microwave Noise Radiators Tutorial—Performance Capabilities of Antenna Arrays


    Original     		PDF APRIL2008 CD-1242-183-10S CD-1242-183-20S CD-1242-183-30S CD-402-802-10S CD-402-802-20S CD-402-802-30S CD-102-103-10S CD-102-103-20S CD-102-103-30S SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03

    mppt ic

    Abstract: PS9306 mppt PS9317 UPD5740 boost converter mppt dip package uPD5740T6N PS9303 PS9305 power line communication modem
    Text: ZUD-CE-10-0005 2010年1月15日 スマートグリッド/スマートホーム パンフレット NECエレクトロニクス株式会社 汎用マイコンシステム事業部 1 NECエレクトロニクスのエコ・コンセプト 世界各地でエコ化へ向けた様々な取組みが行われています。NECエレクトロニクスではエコ実


    Original     		PDF ZUD-CE-10-0005 NEC8/1616/32 LSIFSK10020kbps 10020kbps 50k500kHz CRC16 20MHz 44QFP mppt ic PS9306 mppt PS9317 UPD5740 boost converter mppt dip package uPD5740T6N PS9303 PS9305 power line communication modem

    zigbee antenna diversity

    Abstract: transistor 2.4GHz amplifier schematic wifi transistor 2.4GHz amplifier schematic 2.4 ghz transistor wifi amplifier wifi schematic in mobile NE3508M04 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR uPG2015TB uPG2150T5L SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
    Text: NEC / CEL Components For 2.4GHz ZigBee and ISM Band Applications 2008 v.6 Components for 2.4 GHz Designs Bluetooth, Bluetooth, ZigBee, ZigBee, ISM ISM Band Band Transmitters Transmitters SPDT Switches*: uPG2214TB/TK uPG2030TK uPG2179TB uPG2158T5K uPG2012TK


    Original     		PDF uPG2214TB/TK uPG2030TK uPG2179TB uPG2158T5K uPG2012TK uPG2015TB NESG3031M05/M14 NE662M04 NE3508M04 uPC8233TK zigbee antenna diversity transistor 2.4GHz amplifier schematic wifi transistor 2.4GHz amplifier schematic 2.4 ghz transistor wifi amplifier wifi schematic in mobile NE3508M04 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR uPG2150T5L SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER