pin configuration transistor 2N2222A
Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
Text: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.
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2N2222A
pin configuration transistor 2N2222A
NPN transistor 2n2222A
2N2222A 0612
2N2222A
IC 358
of 2N2222A
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MP-25
Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.
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NP40N06CLC
NP40N06DLC
NP40N06ELC
175dgree
027QMAX.
1000pF
O-220AB
O-262AA
O-220SMD
MP-25
NP40N06ELC
TO-220SMD
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2SA2101
Abstract: 2SA2102 2SA210 npn 60v 3a to220 2SC5895 2SC5896
Text: New High-speed Switching Power Transistor 60V•2A/3A T Overview Unit:mm Switching speed of new type power transistor is improved compared to current ones by more than 50 %. Collector to Emitter Saturation Voltage;VCE(sat)is also 15 % improved. These improved
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O220-D
2SC5895/2SC5896
2SC5895
2SC5896
2SA2101/2SA2102
2SA2101
2SA2102
2SA2101
2SA2102
2SA210
npn 60v 3a to220
2SC5895
2SC5896
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2n2222a transistor
Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
MO-041BB)
2n2222a transistor
2N2222ADCSM
dual npn 500ma
2N2222A surface mount
LE17
013 transistor
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Untitled
Abstract: No abstract text available
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
86mW/Â
MO-041BB)
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUV61 HIGH POWER NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125°C APPLICATION . SWITCHING REGULATORS . MOTOR CONTROL
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BUV61
BUV61
P0030
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Marking lb sot23-5
Abstract: No abstract text available
Text: Central" CMPT2907AE semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2907AE
CMPT2907A
OT-23
OT-23
20-February
Marking lb sot23-5
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Untitled
Abstract: No abstract text available
Text: Central" CMPT2222AE Sem iconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2222AE
CMPT2222A
OT-23
150mA,
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Untitled
Abstract: No abstract text available
Text: Central“ CMPT2222AE Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2222AE
CMPT2222A
OT-23
100mA,
150mA,
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CMPT2222
Abstract: CMPT2222A CMPT2222AE X10-4
Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2222AE
CMPT2222AE
CMPT2222A
OT-23
150mA,
X10-4
CMPT2222
X10-4
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CMPT2907A
Abstract: CMPT2907AE
Text: Central CMPT2907AE Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR TM DESCRIPTION: The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2907AE
CMPT2907AE
CMPT2907A
OT-23
20-February
150mA,
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BUX20
Abstract: SGS-Thomson BUX20 transistor 892 1023 transistor 3030 typ dc motor
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUX20 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED APPLICATIONS . MOTOR CONTROL . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT . HIGH POWER TO-3 PACKAGE
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BUX20
BUX20
SGS-Thomson BUX20
transistor 892
1023 transistor
3030 typ dc motor
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BUX20
Abstract: SGS-Thomson BUX20
Text: BUX20 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ HIGH POWER TO-3 PACKAGE DESCRIPTION
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BUX20
BUX20
SGS-Thomson BUX20
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2SC5739
Abstract: 2SA2057 2SA20 transistor 3005 2
Text: New 60V• 3A NPN /PNP High-speed Switching Power Transistor ! Overview Unit : mm Switching speed of new type power transistor 2SA2057, 2SC5739 is improved compared to current ones by more than 50 %. Collector 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 to Emitter Saturation Voltage ; VCE(sat) is also 40 % improved.
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2SA2057,
2SC5739)
O-220D
2SC5739
2SC5739
2SA2057
2SA20
transistor 3005 2
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Untitled
Abstract: No abstract text available
Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD239C
BD240C.
O-220
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BD239C
Abstract: BD240C JESD97 transistor marking 1a
Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD239C
BD240C.
O-220
BD239C
BD240C
JESD97
transistor marking 1a
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KTC811E
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC811E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・A super-minimold package houses 2 transistor. ・Excellent temperature response between these 2 transistor. ・High pairing property in hFE.
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KTC811E
KTC811E
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KTC801E
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC801E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・A super-minimold package houses 2 transistor. ・Excellent temperature response between these 2 transistor. ・High pairing property in hFE.
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KTC801E
KTC801E
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D1403
Abstract: No abstract text available
Text: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance
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NP30NOGHLD
NP30N06lLD
O-251
O-252
D1403
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Untitled
Abstract: No abstract text available
Text: STC405D Semiconductor NPN Silicon Transistor Applications PIN Connection • Power amplifier application • High current switching application Features • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min.
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STC405D
STC405D
STC405
O-252
KSD-T6O017-000
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2sa2005
Abstract: Audio Output Transistor Amplifier TO-220FN 2SC5511
Text: 2SA2005 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (-160V, -1.5A) 2SA2005 ! External dim ensions (Units : mm) ! Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVceo = - 1 60V)
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2SA2005
-160V)
150MHz)
2SC5511.
O-220FN
-50pA
-160V
2sa2005
Audio Output Transistor Amplifier
TO-220FN
2SC5511
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2N3904
Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
Text: 2N3904 TRANSISTOR NPN PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with
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2N3904
2N3906
OT-23
MMBT3904
2N3904
2n3904 TRANSISTOR PNP
2n3904 transistor
2N3904, transistor
2N3904 plastic
22N3904
data sheet transistor 2n3906
03 transistor
2N3904 SOT-23
2N3904 transistor data sheet free download
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BFX34
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR BFX34 TO-39 NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.
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BFX34
C-120
BFX34
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR BFX34 TO-39 NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.
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BFX34
C-120
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