Untitled
Abstract: No abstract text available
Text: * SY10L484-7/8/10 SY100L484-7/8/10 SY101L484-7/8/10 LOW-POWER 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: ■ Chip select access time, 7/8/1 Ons max. tA c : T h e S ynergy S Y 1 0L/1 00L /101 L48 4 are 16384-bit R andom
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SY10L484-7/8/10
SY100L484-7/8/10
SY101L484-7/8/10
16384-bit
10K/100K
F28-1
SY10L/10017101L484-10YCS
Y28-1
Q013fll
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Untitled
Abstract: No abstract text available
Text: * SY10L484-7/8/10 S Y100L484-7/8/10 SY101L484-7/8/10 LOW POWER 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION The Synergy SY10L/100L/101L484 are low-power versions of Synergy's ultra-high-speed 16,384-bit Random Access Memories RAMs , designed with advanced Emitter
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SY10L484-7/8/10
Y100L484-7/8/10
SY101L484-7/8/10
SY10L/100L/101L484
384-bit
SY10LV100L/101L484
096-words-by-4-bits,
10/100/101K
AS01710017101L484-7PCS
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L484 IC
Abstract: L484
Text: * SY10L484-7/8/10 SY100L484-7/8/10 SY101 L484-7/8/10 LOW-POWER 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 7/8/1 Ons max. tA c : The S ynergy S Y 1 0L/1 00L /101 L48 4 are 16384-bit R andom
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SY10L484-7/8/10
SY100L484-7/8/10
SY101
L484-7/8/10
-220mA
10K/100K
16384-bit
L484 IC
L484
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SY101L484
Abstract: No abstract text available
Text: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity
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TD013
QDDD07C
-180m
10K/100K/
101KECL
384-bit
SY10L/10017101L484-7PCS
SY10L/100L/101L484-7FCS
SY10L/100L/101L484-7YCS
SY10L/100L/101L484-8PCS
SY101L484
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