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    SYM11 Price and Stock

    Mini-Circuits SYM-11-

    IC MIXER 1MHZ-2.5GHZ 6SMD
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    DigiKey SYM-11- Reel 500
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    Mini-Circuits SYM-11LH-

    IC MIXER 1MHZ-2GHZ 6SMD
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    DigiKey SYM-11LH- Reel 500
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    Mini-Circuits SYM-11LH+

    RF Mixer DBL BAL MIX / SURF MT / RoHS
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    Mouser Electronics SYM-11LH+ 417
    • 1 $18.13
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    Mini-Circuits SYM-11+

    RF Mixer DBL BAL MIX / SURF MT / RoHS
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    Mouser Electronics SYM-11+ 238
    • 1 $14.88
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    Mini-Circuits TB-SYM-11LH+

    RF Development Tools
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    Mouser Electronics TB-SYM-11LH+
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    SYM11 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SYM-11 Mini-Circuits FREQUENCY MIXER Original PDF
    SYM-11 Mini-Circuits RF Mixer, Frequency Mixers Original PDF
    SYM-11+ Mini-Circuits RF Mixer: Frequency Mixers Original PDF
    SYM-11H Mini-Circuits RF Mixer: Frequency Mixers Original PDF
    SYM-11H Mini-Circuits FREQUENCY MIXER Original PDF
    SYM-11H+ Mini-Circuits RF Mixer: Frequency Mixers Original PDF
    SYM-11J Mini-Circuits FREQUENCY MIXER Original PDF
    SYM-11J Mini-Circuits RF Mixer, Frequency Mixers Original PDF
    SYM-11J+ Mini-Circuits RF Mixer: Frequency Mixers Original PDF
    SYM-11LH Mini-Circuits FREQUENCY MIXER Original PDF
    SYM-11LH+ Mini-Circuits DBL BAL MIX / SURF MT / T&R / RoHS Original PDF
    SYM-11MH Mini-Circuits RF Mixer: Frequency Mixers Original PDF
    SYM-11MH Mini-Circuits FREQUENCY MIXER Original PDF
    SYM-11MH+ Mini-Circuits RF Mixer: Frequency Mixers Original PDF

    SYM11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C570X7R1H106KT000N

    Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642 771-BLF642112 BLF642 C570X7R1H106KT000N SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 C570x

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount SYM-12+ SYM-12 Frequency Mixer Level 7 LO Power +7 dBm 5 to 1200 MHz Maximum Ratings Operating Temperature Features • low conversion loss, 6.5 dB typ. • excellent L-R isolation, 50 dB typ.; L-I, 46 dB typ. • IF response to DC -40°C to 85°C


    Original     		PDF SYM-12+ SYM-12 TTT167 2002/95/EC) DC-1000 SYM-12

    Untitled

    Abstract: No abstract text available
    Text: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 7 GHz FREQUENCY MHz MODEL NO. LO/RF IF fL-fU =JMS ASK-KK81 +7 dBm LO, up to +1 dBm RF CONVERSION LOSS dB LO-RF ISOLATION dB =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB Total Mid-Band Range m L M U L M U σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.


    Original     		PDF ASK-1-KK81 ASK-2-KK81 JMS-11X LRMS-30J RMS-11F RMS-11X RMS-30 DC-600 DC-1000 DC-500

    Untitled

    Abstract: No abstract text available
    Text: FREQUENCY MIXERS Surface Mount LEVEL 13 150 kHz to 6 GHz ADE +13 dBm LO, up to +9 dBm RF FREQUENCY MHz MODEL NO. NEW u NEW u NEW u u u u ADE-1MH ADE-1MHW ADE-12MH ADE-25MH ADE-35MH ADE-42MH u ALY-44MH u ALY-44MHW u u u u LO/RF 2-500 0.5-600 10-1200 5-2500


    Original     		PDF ADE-12MH ADE-25MH ADE-35MH ADE-42MH DC-500 DC-600 DC-1200 TB-03 TB-12 TB-11

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35

    BLF6G22-180PN

    Abstract: No abstract text available
    Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22-180PN BLF6G22-180PN

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    BLS6G2731-120

    Abstract: No abstract text available
    Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.


    Original     		PDF BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120

    BLF3G22-30

    Abstract: C3225X7R1H155M TEKELEC
    Text: BLF3G22-30 UHF power LDMOS transistor Rev. 01 — 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance


    Original     		PDF BLF3G22-30 BLF3G22-30 C3225X7R1H155M TEKELEC

    transistor d 1302

    Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component

    BLS6G3135S-120

    Abstract: BLS6G3135-120
    Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G3135-120; BLS6G3135S-120 BLS6G3135-120 6G3135S-120 BLS6G3135S-120

    BLF6G22-45

    Abstract: BLF6G22S-45 ROGERS DUROID
    Text: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22S-45 BLF6G22S-45 BLF6G22-45 ROGERS DUROID

    BLF6G20-110

    Abstract: BLF6G20LS-110 RF35
    Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871; BLF871S BLF871 BLF871S

    transistor 1892

    Abstract: ACPR400 ACPR600 BLC6G20-75 BLC6G20LS-75
    Text: BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance


    Original     		PDF BLC6G20-75; BLC6G20LS-75 ACPR400 ACPR600 BLC6G20-75 6G20LS-75 transistor 1892 BLC6G20LS-75

    BLF7G27LS-100

    Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100 BLF7G27LS-100 ACPR1980 BLF7G27 flanged pin

    SYM-11

    Abstract: TTT167
    Text: Surface Mount SYM-11+ SYM-11 Frequency Mixer Level 7 LO Power +7 dBm 1 to 2500 MHz Maximum Ratings Features Operating Temperature Storage Temperature • wideband, 1 to 2500 MHz • low conversion loss, 7.0 dB typ. • good isolation, 40 dB typ. L-R, 35 dB typ. L-I


    Original     		PDF SYM-11+ SYM-11 TTT167 SYM-11 TTT167

    h a 431 transistor

    Abstract: No abstract text available
    Text: BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 1 — 16 September 2010 Objective data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27L-50BN; BLF6G27LS-50BN BLF6G27L-50BN 6G27LS-50BN h a 431 transistor

    150P

    Abstract: BLF7G27LS-150P ACPR1980 ACPR885
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P 150P BLF7G27LS-150P ACPR1980 ACPR885

    BLF7G20L-90P

    Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70

    BLF7G24LS

    Abstract: BLF7G24L-140 BLF7G24LS-140 nxp semiconductors
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 1 — 5 August 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k IS-95 BLF7G24L-140 7G24LS-140 BLF7G24LS BLF7G24LS-140 nxp semiconductors

    transistor j449

    Abstract: SOT113 JESD625-A 001aam267
    Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information


    Original     		PDF BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 transistor j449 SOT113 JESD625-A 001aam267

    BLF7G20LS-140P

    Abstract: 850 SMD Rework Station RF35
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35

    radar amplifier s-band

    Abstract: radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
    Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731S-130 radar amplifier s-band radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID