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    T 1829-1 TRANSISTOR Search Results

    T 1829-1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T 1829-1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYL E


    Original     		PDF BLV21 BLV21 10dBat15W/175MHz S125NOM 3804LFLG 175MHz

    BLW76

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and


    Original     		PDF BLW76 BLW76

    t 1829

    Abstract: buzer F14E E0C63158 E0C63256 E0C63358 S1C63557
    Text: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


    Original     		PDF MF1106-03 S1C63557 S1C63557 F-91976 E-08190 t 1829 buzer F14E E0C63158 E0C63256 E0C63358

    buzer

    Abstract: E0C63158 E0C63256 E0C63358 S1C63557
    Text: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


    Original     		PDF MF1106-03 S1C63557 S1C63557 buzer E0C63158 E0C63256 E0C63358

    Untitled

    Abstract: No abstract text available
    Text: MF1106-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


    Original     		PDF MF1106-02 S1C63557 S1C63557 E-08190

    2160 transistor

    Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
    Text: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order


    Original     		PDF GSP7427-89 GSP7427-89 100MHz 150mA 2160 transistor GSP7427 RO4003 C 2120 Y unmatched bare amplifier W-335 L381

    ARM7500FE

    Abstract: 08FF 0x032000F8
    Text: 1 18 11 I/O Subsystems This chapter describes the ARM7500FE I/O subsystems. 18.1 Introduction 18-2 18.2 I/O Address Space Usage 18-3 18.3 Additional I/O Chip Select Decode Logic 18-4 18.4 Simple 8MHz I/O 18-4 18.5 Module I/O 18-11 18.6 PC Bus-style I/O 18-15


    Original     		PDF ARM7500FE 0077B IOCK32 32MHz. 08FF 0x032000F8

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS • Ö235b05 D0TDflb3 OTfl PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN Type Marking Ordering Code (tape and reel)


    OCR Scan     		PDF 235b05 Q68000-A6479 Q68000-A6483 OT-23 EHP00878

    bta 92

    Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
    Text: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation


    OCR Scan     		PDF Q68000-A6479 Q68000-A6483 OT-23 EHP0088J bta 92 BTA43 smbta93 93 MARKING CODE NPN S2e bta 05

    UF2840G

    Abstract: transistor C 245 b
    Text: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n


    OCR Scan     		PDF UF2840G 72APACITOR 1000pF 2-500pF 500pF UF2840G transistor C 245 b

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.


    OCR Scan     		PDF bbS3T31 00BSfl57 PMBT2907 PMBT2907A

    L7E transistor

    Abstract: PMBT2907A PMBT2907 1N916
    Text: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.


    OCR Scan     		PDF PMBT2907 PMBT2907A PMBT2907 bbS3T31 PMBT2907A 1N916 L7E transistor 1N916

    diode sg 87

    Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
    Text: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SGSP101/P102 SGSP201/P202 301/P30Z SP301 SP302 E--03 SGSP101/P102 SGSP301/P302 1728J diode sg 87 P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21

    2SC1811

    Abstract: 2SA896 138D 2SA1015
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 250nS 190nS 2SC1811 2SA896 138D 2SA1015

    Motorola AN-546

    Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application
    Text: 1EE D I b3b 72 54 00fl7fc.?fc> M | MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli­


    OCR Scan     		PDF 00fl7fc. 33-/r MRF460 2N6368 RF460 AN-282A. AN-546. Motorola AN-546 MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application

    zener diode 7c3

    Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
    Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies


    OCR Scan     		PDF MRF255/D 2PHX34608Q zener diode 7c3 electrolytic capacitor 470 Nippon capacitors MRF255 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)


    OCR Scan     		PDF 25-Technologie IS21I2 OT-363 de/Semiconductor/products/35/35 235b05 fl535b05 015252t)

    Untitled

    Abstract: No abstract text available
    Text: S G S-THOMSON Q7C D | 7 ^ ^ 2 3 7 u u s/m u s IN T E G R A T E D f f f f B e fv CIRCUIT QD14fleia fl I h c c /h c f « •• . 7929225 S G S : ^ ic S E M IC O N D U C T O R 0 8 9 0 6 i b ] j d T - V 3 '2 ^ / CORP EXPANDABLE 4-WIDE 2-INPUT A N D-O R-IN VERT GATE


    OCR Scan     		PDF QD14fle D--07

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


    OCR Scan     		PDF 2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460

    PXTA14

    Abstract: BST60 PMBTA14 2PD601A PMBTA64
    Text: SELECTION GUIDE page G eneral p urpose tra n sisto rs 24 H ig h -fre q u e n cy tra n sisto rs 28 B ro a d b a n d tra n sisto rs 29 S w itch in g tra n sisto rs 31 L o w -n o ise tra n sisto rs 33 H ig h -vo lta g e tra n sisto rs 34 F ie ld -e ffe ct tra n sisto rs


    OCR Scan     		PDF RAT43 KTY82-110 KTY82-120 KTY82-150 KTY82-210 KTY82-220 KTY82-250 KTY85-110 KTY85-120 KTY85-150 PXTA14 BST60 PMBTA14 2PD601A PMBTA64

    CERDIP 28 PINS

    Abstract: harmonic 4200 serie BERV DFP28
    Text: SÜEbôTS ÜÜDlbSS HSH TS 83510 BIPOLAR HIGH SPEED 10-BIT A/D CONVERTER DESCRIPTION The TS 83510 is a m onolithic sampling 10-bit A/D converter, designed for applications requiring high speed conversion, while m aintaining low power requirements. Combining on-board track-and-hold am plifier, internal refe­


    OCR Scan     		PDF 10-BIT 50MHz CERDIP 28 PINS harmonic 4200 serie BERV DFP28

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    2.4v OUTPUT regulator

    Abstract: multiple output regulator ic car ignition circuit diagram SOT110 TDA3602
    Text: Product specification Philips Semiconductors Multiple output voltage regulator TDA3602 FEATURES GENERAL DESCRIPTION • Two V p state controlled regulators REG1 and REG2 The TDA3602 is a m ultiple output voltage regulator, intended for use in car radios with or w ithout a


    OCR Scan     		PDF TDA3602 y1994 711DA2b 711D62L. 2.4v OUTPUT regulator multiple output regulator ic car ignition circuit diagram SOT110 TDA3602

    G034

    Abstract: No abstract text available
    Text: 4L*R ockw ell Semiconductor Systems RCV336DPÌ V.34 Data, V.17 Fax, Voice, Modem Data Pump Introduction Features The Rockwell RCV336DPi is a V.34 modem data pump family that supports data rates up to 33600 bps, fax operation up to 14400 bps, and voice coding/decoding


    OCR Scan     		PDF RCV336DPÌ RCV336DPi RC336DPi MD165 G034