2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SC3953
Abstract: TRANSISTOR T0220 2SC3597
Text: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)
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HPA72R*
T03PBL
HPA100R
2SC4256
2SC4257
2SC3675
2SC3676
2SC4450
2SC3953
TRANSISTOR T0220
2SC3597
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Untitled
Abstract: No abstract text available
Text: I Ordering number:EN 3688 2SC4710 No.3688 NPN Triple Diffused Planar Silicon Transistor 2100V/10mA High-Voltage Amp, High-Voltage Switching Applications ; Features •High breakdown voltage Vceo min = 2100 V . • Small Cob (typical Cob = 1.3pF). • Wide ASO.
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2SC4710
100V/10mA
500//A
2079B
T0-220FI
73094MT
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2SC4630LS
Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )
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T0-220FI
T0-220.
diffus-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
2SC4630LS
2SC4631LS
2SC4632LS
2SC4633LS
2SC4634LS
2SC4635LS
2SC4636LS
2SC4637LS
2SC4710LS
T0-126ML
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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2sc4710
Abstract: No abstract text available
Text: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )
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Ratings/Ta-25t
2SC4572
2SC4578
2SC4579
T0-220MFs
MT950112TR
2sc4710
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SJ32C
Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK19
2SK1923
T0-220
2SK1924
2SK2043LS
2SK2044LS
O-220FI
2SK2045LS
2SK19;
2SK1922
2SJ32C
2SK14
2SK2142
2sj320
2sj306
2SK142
2SK195
2SK2161
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN4287A 2SK2045 N0.4287A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F eatures • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tn- = 140ns . • Micaless package facilitating easy mounting.
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EN4287A
2SK2045
140ns)
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sanyo transistor tt series
Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.
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becom-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
sanyo transistor tt series
TO225 LEAD FORMING
TRANSISTORS SANYO
sanyo transistor
SSFP package
2SB1269
2SB1449
2SB1450
2SC5264
2SC5420
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DD54
Abstract: DD54RC
Text: Ordering number:EN4405A No.4405A SAPfYD i _ DD54RC Silicon Diffused Junction Type Damper Diode for Ultrahigh-Defmition Display Applications F eatures • High breakdown voltage Vrrm ; 1500V . • High reliability. • One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
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EN4405A
DD54RC
DD54
DD54RC
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k669 transistor
Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r
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250mm
Ratings/Ta-25
2SK2170UA)
2SK1069
2SK1332CV)
2SK209KH)
2SK2219CD)
T0-126LP
T0-220CI
T0-220ML
k669 transistor
k544
K932 transistor
mosfet k544
k427 transistor
k583
k427
K932
k222 mosfet
k546
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DD54SC
Abstract: No abstract text available
Text: O rd e rin g n u m b e r .E N 5122A N 0 .5 I 2 2 A _Silicon DiffusedDD54SC Junction Type Damper Diode for Ultrahigh-Defxnition Display Applications Features • High breakdown voltage Vrrm : 1600V . • High reliability. • One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
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5I22A
DD54SC
DD54SC
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C4106 transistor
Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower
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T0-220MF
O-220
Ratings/Ta-25
T0-220)
2SB1267
2SD1903
D1235
2SB1268
2SD1904
C4106 transistor
C4106
transistor c3457
B824 transistor
c4106 semiconductor
transistor c3447
transistor c4106
transistor d1061
D1060
d1061
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F527S
Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.
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Cas-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
F527S
2sc55
marking WMM
2SC5488
2SC4853
2SC4931
2SC5277
2SC5374
2SC5489
2SC553
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Untitled
Abstract: No abstract text available
Text: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.
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T0-220AB,
SC-45
T0-220AA)
T0-220FIÃ
LSXSC-67^
OT-189
weight-Og186,
T0-220MF
SC-65,
O-218)
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High-speed switching
Abstract: No abstract text available
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 25 hFE@VCE • 1C VCBO (V VCE0 (V) W 1C (A) PC (W) (? ) hFE VCE (V) V) f r e v c E ' 1C 1C (A) fr (MHz) VCE (V) Ic (A) tf(toff) max
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2SA1936
2SC3646
2SC3647
2SC3042
T03PB
2SC3083
2SC3088
2SC3089
High-speed switching
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2SK1460
Abstract: No abstract text available
Text: 2SK1460 2078 U H U l t r a h i g h V o l t a g e S e rie s V Dss = 9 0 0 V N Channel Power MOSFET E 3463 F e a tu r e s • Low ON-state resistance. •Very high-speed switching. - Converters. - Micaless package facilitating mounting. A b s o lu te M a x im u m R a tin g s a t Ta = 25°C
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2SK1460
10//S,
T0-220FI
6131JN
2SK1460
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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2SC3253
Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t
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TQ-220,
2SB1267
2SD1903
T0-220MF
2SB919
2SD1235
T0-220
2SB903
2SD1212
2SB1467
2SC3253
2SD1212
2SD2218
SC74
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TRANSISTOR 2SD2627
Abstract: TO220FI-LS 2sd2627 TO-220FI-LS 6aj6a ENN6478
Text: Ordering num ber: ENN6478 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltageCVCBO^ 1500V . High reliability Adoption o f HVP process).
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ENN6478
2SD2627
2079C
2SD2627]
O-220FI-LS
500nH
IT01817
TRANSISTOR 2SD2627
TO220FI-LS
2sd2627
TO-220FI-LS
6aj6a
ENN6478
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Untitled
Abstract: No abstract text available
Text: SA0YO SANYO Discrete Device Package Out 1ines unit:mm Large-Signal Transistors Smal1-Signal Transistors SMP, SMP-FD, T0-220, T0-220ML, T0-220FI (LS), T0-220MF, T0-3PB, T0-3PML, T0-3PBL, T0-3JML. Outlines SMCP, MCP, CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6,
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T0-220,
T0-220ML,
T0-220FI
T0-220MF,
O-126,
T0-126ML,
T0-126LP
T0-220ML
T0-2220FI
SC-43A,
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2SA1829
Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Text: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.
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2SC2857
oin50
2SA1689/2SC4449
2SC5291
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
2SA1829
2SC3790
p7060
T0-126ML
2SA1371
2SC4732
e1aj
SANYO CP5
transistor 2sc3788
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2SD1213
Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .
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2SB904
2SD1213
2SB1511
2SD2285
0V/60V
2SB827
2SD-126
T0-126LP
T0-220CI
T0-220ML
e1aj
2SB828
2SB829
2SD1063
2SD1064
2SD1065
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