Untitled
Abstract: No abstract text available
Text: Part num ber schem e TO-240AA compatible package PS MT 91 N 16 KNX 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)
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O-240AA
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Untitled
Abstract: No abstract text available
Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSM D 2 5 N . . se r ie s I F AVE 2 5 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS MD 25 N 12 KNX
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O-240AA
T0-240AA.
125OC.
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Untitled
Abstract: No abstract text available
Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSKD 2 5 N . . se r ie s I F AVE 2 5 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS KD 25 N 12 KNX
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O-240AA
T0-240AA.
125OC.
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Untitled
Abstract: No abstract text available
Text: Part num ber schem e TO-240AA compatible package PS KT 110 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)
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O-240AA
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Untitled
Abstract: No abstract text available
Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSM D 9 1 N . . se r ie s I F AVE 9 0 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS MD 91 N 12 KNX
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O-240AA
T0-240AA.
125OC.
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Untitled
Abstract: No abstract text available
Text: Part num ber schem e TO-240AA compatible package PS MT 25 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)
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Original
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O-240AA
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Untitled
Abstract: No abstract text available
Text: Part num ber schem e TO-240AA compatible package PS KT 25 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)
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Original
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O-240AA
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Untitled
Abstract: No abstract text available
Text: Part num ber schem e TO-240AA compatible package PS KT 91 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)
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O-240AA
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diode DSDI 9
Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B
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O-247
O-220
O-264
IXGH24N50B
IXGH24N50BU1
IXGH50N50B
10N60A
IXGH24N60B
IXGH24N60BU1
IXGH50N60B
diode DSDI 9
IXLN35N120AU1
diode DSDI 12
IXLH35N120A
DSP8-12A
a1931
DSP8-08AS
95-06DA
IXln35N120A
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E78996 rectifier module
Abstract: IRFK2D450 9453B 100-C IRFK2D451 hex-pak
Text: H E D MflSSMSa INTERNATIONAL □ 0 0 ö cn 4 & I Data Sheet No. PD-9.453B r e c t if ie r T-39-27 INTERNATIONAL. RECTIFIER S \ 1 RECOGNIZED File no E78996 I“R HEXPAK POWER MODULE IRFKSD450 IRFKSD451 Isolated Base Power HEXFET Assembly Half Bridge Configuration
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T-39-27
E78996
E78996 rectifier module
IRFK2D450
9453B
100-C
IRFK2D451
hex-pak
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Untitled
Abstract: No abstract text available
Text: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / • S tandard JE D E C package ■ S im p lifie d m echa n ical desig n s, rapid a ssem b ly ■ A u xilia ry cathode te rm in a ls o r w irin g conve n ien ce H igh s u rg e ca p a b ility
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IRKU/V105
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IRF460 in TO220
Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of
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T0-240AA
IRF460 in TO220
IRF09110
IRF448
of IRF9540 and IRF540
irf460 switching
irf460 to247
IRF250 TO-247
IRF244
Application of irf250
IRFD9120 N CHANNEL
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v105
Abstract: 16S90 tsr 002
Text: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / Features Electrically Isolated: DBC base plate • ■ ■ ■ 350 0 V RMS Isolating voltage Standard JED E C package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals or wiring convenience
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ULE78996
27K/W
IRKU/V105
20ohrro
v105
16S90
tsr 002
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I8031
Abstract: No abstract text available
Text: Outline drawings Dimensions in mm and inches 1 mm = 0.0394" TO-252 AA (D PAK) i 'l 1 TO-251 AA r * r L2 1 - E - - - 12 I— 62 ^ i-±- - t “ 1 J ' • o 1 T0-220 AC -o J - ft* - - i F t * B f i •" * i * A r J l r 13 I 9 i r ? U l]!L h T E1 . _[
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O-251
O-252
T0-220
-ATH03E
I8031
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Irfp250 irfp460
Abstract: Irfp250 irfp260 irfp9240
Text: 1 I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS Rd V B« 0SS Drain-to-Source Breakdown Voltage (Volts) Part Number sm On-State Resistance (Ohms) IßCofitinuous Drain Current 25'C IW C RthJC Max Thermal Resistance (Amps) (Ampi) row) PD«To 2PC
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IRFP044
IRFP048
IRFP054
IRFP064
IRFP140
IRFP150
IRFP240
IRFP250
IRFP260
IRFP244
Irfp250 irfp460
Irfp250 irfp260
irfp9240
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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IRFK2D054
IRFK2D150
IRFK2D250
IRFK2D350
IRFK2D450
IRFK2DC50
IRFK2DE50
IRFK3D150
IRFK3D250
IRFK3D350
IRFBE40
IRFBG40
MOSFET IRF460
IRLC140
irfc9024
IRFBF40
irlc120
IRLC014
IRFC9034
IRLC034
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mcc4412i01b
Abstract: ixys mcc95 mcc56-12i08b MCC44-12I01B MDD95-16N1 MCC72-12I01 T0240AA MCC95-08I08B IXYS MCC44 IXYS MDD95
Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 TupucTopHbie m .qMOflHbie MOflynM ^ m p m u IXYS Kofl: U r rm I t(r m s ) I t (a v ) M CC44-12I01B M CC56-12I08B M CC72-12I01B M CC95-08I01B M CC95-08I08B MCC162-08I01 M CD26-08I08B M CD56-08I08B
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MCC44-12I01B
T0240AA
MCC56-12I08B
MCC72-12I01B
MCC95-08I01B
MCC95-08I08B
mcc4412i01b
ixys mcc95
MDD95-16N1
MCC72-12I01
T0240AA
IXYS MCC44
IXYS MDD95
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3 phase inverter 120 conduction mode waveform
Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed
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AN-967A
3 phase inverter 120 conduction mode waveform
inverter irf840
trf530
IRFP450 inverter
sin wave inverter circuit diagram
irfp460 inverter
Three phase inverter using irfp450 mosfet Diagram
irf840 pwm ac sine inverter
h bridge irf840 inverter
irfp460 mosfet pwm inverter
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FL110
Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case
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OT-89
OT-89
IRCC044
IRCC140
IRCC240
IRCC244
IRCC340
IRCC440
IRCC054
FL110
LL110
irf7408
lr014
IRC540 equivalent
IRL1Z14G
IRFC024
IRFBE30 equivalent
IRFCG50
irfbc10lc
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IXTH7P50
Abstract: No abstract text available
Text: VM M MOSFET Modules VM K N-Channel Enhancement Mode V DSS max. B *D25 Tc = 25°C A DS{on max. Te * 25°C mû ciM Cr8S typ. typ. trr typ. typ. Q0 ^thJS max. nF nF ns nC Package style K/W PD max. T > 2 5 “C W Fig. No. Type TJM = 150°C ► New ► VMM 600-007F *
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600-007F
650-01F
550-01F
650-01F
90-02T2
85-02F
380-02F
400-02F
T0-240AA
10P50
IXTH7P50
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IRFK20450
Abstract: IRFK20350 IRFK6H450 IRFK3F350
Text: International HEXFET Power MOSFETs ^ R ectifier HEX-Pak Modules TO-240 N-Charnel Part Number BVq s s Drain Source Voltage Volt RDS(on) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IRFK2D054 IRFK2D150 IRFK2D250 IRFK20350 IRFK20450
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O-240
IRFK4H150
IRFK4H250
IRFK4H350
IRFK4H450
IRFK4HC50
IRFK4HE50
T0-240AA
IRFK4J054
IRFK20450
IRFK20350
IRFK6H450
IRFK3F350
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