T0-254AA
Abstract: No abstract text available
Text: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]
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T0-254AA
5M-1994.
O-254AA.
T0-254AA
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IRHM9250
Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
Text: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D
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91299C
T0-254AA)
IRHM9250
JANSR2N7423
MIL-PRF-19500/662
IRHM93250
JANSF2N7423
O-254AA.
IRHM9250
IRHM93250
JANSF2N7423
JANSR2N7423
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Untitled
Abstract: No abstract text available
Text: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)
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90713E
IRHM7230
T0-254AA)
IRHM3230
IRHM4230
IRHM8230
1000K
O-254AA
IRHM57163SED
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Untitled
Abstract: No abstract text available
Text: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)
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PD-91299E
IRHM9250
JANSR2N7423
MIL-PRF-19500/662
T0-254AA)
IRHM93250
JANSF2N7423
reduces54AA.
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JANSR2N7432
Abstract: IRHM3160 IRHM4160 IRHM7160 IRHM8160
Text: PD-91331E IRHM7160 JANSR2N7432 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA REF: MIL-PRF-19500/663 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7160 IRHM3160 IRHM4160 IRHM8160 Radiation Level 100K Rads (Si) 300K Rads (Si)
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PD-91331E
IRHM7160
JANSR2N7432
T0-254AA)
MIL-PRF-19500/663
IRHM3160
IRHM4160
IRHM8160
1000K
JANSR2N7432
IRHM3160
IRHM4160
IRHM7160
IRHM8160
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IRHM3260
Abstract: IRHM4260 IRHM7260 IRHM8260
Text: PD - 91332D IRHM7260 JANSR2N7433 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA REF: MIL-PRF-19500/663 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω
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91332D
IRHM7260
JANSR2N7433
T0-254AA)
MIL-PRF-19500/663
IRHM3260
IRHM4260
IRHM8260
1000K
IRHM3260
IRHM4260
IRHM7260
IRHM8260
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Untitled
Abstract: No abstract text available
Text: PD - 90707D IRHM7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si)
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90707D
IRHM7130
T0-254AA)
IRHM3130
IRHM4130
IRHM8130
1000K
O-254AA
IRHM57163SED
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET
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1223B
IRHM7450SE
46SS452
DD25457
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8S42*
15054AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0258AA
SM3S42*
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: h is s e ma i c or n dr u c t o r FSF450D, FSF450R " " m y m a m w m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 9A, 500V, Tqs ^o N = 0.600ÎÎ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSF450D,
FSF450R
100kRADS
1-800-4-HARRIS
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50n06
Abstract: No abstract text available
Text: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
QM50N05SA
QM50N05ST
O-257
O-254
MIL-S-19500,
50n06
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Untitled
Abstract: No abstract text available
Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSJ264D,
FSJ264R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings
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JANSR2N7298
FRF450R4
1000K
1-800-4-HARRIS
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IRFG1Z0
Abstract: irfh25 irfg9110 IRFH150
Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15
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O-258
IRFV360
IRFV460
O-258
IRFH150
IRFH250
IRFH350
IRFH450
O-210AC
IRFG110
IRFG1Z0
irfh25
irfg9110
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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IRH250
Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Text: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1
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IRHN25Q
IRHN450
IRHE120
IRHE130
MO-Q36B
M0036AB
IRHG110
T0-205AF
IRHF130
IRHF230
IRH250
TO-254AA Package
hexfets
IRHM450
IRHM150
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM6F151*
SM6F251*
SM6F351*
SM6F451*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8U22*
SM8U42*
SM8U52*
SM8U62*
T0258AA
FT0258AA
HDS100
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T0254AA
Abstract: T0257AA
Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,
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000301S
T0257AA
SM1S41
SM1S01
T0258AA
FT0258AA
HDS100
T0254AA
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IRFM040
Abstract: IRFM050 IRFM460 4B4 RECTIFIER IRFM9130 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340
Text: HIGH-REL HEXFETs I N T E R N A T I O N A L R E C T I F I E R r io R ~ I NT ERN ATIO NAL RECTIFIER 2LE D • 4fi5S452 ODIOSbb fl ■ M-pak — TO-254AA Isolated Package N-CHANNEL Types Vos V if IRFM050 IRFM040 RDS(0N1 1q com >DM PD (max) Tc - 25°C pulsed
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O-254AA
IRFM050
IRFM040
T0-254AA
IRFM150
IRFM140
IRFM250
IRFM240
IRFM360
IRFM350
IRFM460
4B4 RECTIFIER
IRFM9130
IRFM340
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Untitled
Abstract: No abstract text available
Text: G o v e rn m e n t • ‘,a5S1,;’2 o o i b i ? 3 Mm H I M * S o ac e Pro d u cts INTERNATIONAL RECTIFIER u p a i f G i IU U U U IO O th e r Products bSE » Fro m IR S c h o ttk y — H ig h Reliability/Mil Qualified Pari Number VRRM lF AV @ Tc Vf M >FM
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
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Untitled
Abstract: No abstract text available
Text: JANSR2N7404 33 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, ros ON = 0-290Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSF9250R4
-200V,
0-290Q
JANSR2N7404
1-800-4-HARRIS
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