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    T04 30 TRANSISTOR Search Results

    T04 30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T04 30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QST4 Transistors Low frequency amplifier QST4 zApplication Low frequency amplifier Driver zExternal dimensions Unit : mm 2.8 2.9 0.85 0.16 (3) (2) 0.4 zFeatures 1) A collector current is large. 2) VCE(sat) ≦ −250mV At IC=−1.5A / IB=−30mA (4) (5) (6)


    Original     		PDF 100MHz

    Buffer Amplifier Ghz

    Abstract: THM2004J
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Buffer Amplifier Ghz

    transistor SMD t04

    Abstract: smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 transistor SMD t04 64 transistor SMD t04 78 tyco igbt module 25A
    Text: Optical Semiconductor Devices Visible LEDs z 248 Photo Couplers z 254 Photo Sensors z 272 Fiber-Optic Devices TOSLINK z 278 Visible Laser Diodes z 281 Optical Communication Devices z 281 CCD and CMOS Image Sensors z 282 247 Visible LEDs InGaAP High-Brightness (Package Size :ϕ 5)


    Original     		PDF 22PIN 15PIN 12PIN 20PIN 01/2Q 01/1Q 02/3Q 02/4Q transistor SMD t04 smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 transistor SMD t04 64 transistor SMD t04 78 tyco igbt module 25A

    transistor T04

    Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz transistor T04 SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics

    transistor SMD t04

    Abstract: transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TCD2959 TODX271A TCD2716DG tcd2563bfg
    Text: Optical Semiconductor Devices Visible LEDs Photosensors Photocouplers and Photorelays Fiber-Optic Devices TOSLINKTM Image Sensors 147 155 158 182 186 145 Visible LEDs Dual-Color LED Lamps Part Number TLRMHGH48T(F) TLRMHGH48M(F) Source Color Intensity (mcd)


    Original     		PDF TLRMHGH48T TLRMHGH48M ET8E99-AS transistor SMD t04 transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TCD2959 TODX271A TCD2716DG tcd2563bfg

    Untitled

    Abstract: No abstract text available
    Text: QST4 Transistors Low frequency amplifier QST4 zApplication Low frequency amplifier Driver zExternal dimensions Unit : mm 2.8 2.9 0.85 0.16 (3) (2) 0.4 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ −250mV At IC=−1.5A / IB=−30mA (4) (5) (6)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US6T4 Transistors Low frequency amplifier US6T4 6 (1) 0.2 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 1.3 (2) 2.0 (3) (5) 0.85Max. 0.3 zFeatures 1) A collector current is large. 2) VCE(sat) ≦ −250mV At IC=−1.5A / IB=−30mA (4) 0.65 0.65 zExternal dimensions (Unit : mm)


    Original     		PDF 15Max.

    transistor SMD t04

    Abstract: TCD1254GFG TCD2964 TCD2964BFG TCD2716DG TCD2712DG transistor SMD t05 TOTX1701 tcd2563bfg TCD1103GFG
    Text: SEMICONDUCTOR GENERAL CATALOG Optical Semiconductor Devices Visible LEDs Photosensors Photocouplers and Photorelays Fiber-Optic Devices TOSLINKTM Image Sensors 1 2009-8 SCE0004I Visible LEDs Dual-Color LED Lamps Part Number TLRMHGH48T(F) TLRMHGH48M(F) Source Color


    Original     		PDF SCE0004I TLRMHGH48T TLRMHGH48M transistor SMD t04 TCD1254GFG TCD2964 TCD2964BFG TCD2716DG TCD2712DG transistor SMD t05 TOTX1701 tcd2563bfg TCD1103GFG

    Untitled

    Abstract: No abstract text available
    Text: QST4 Transistors Low frequency amplifier QST4 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver 2.8 2.9 (4) (5) (6) 0.85 0.16 zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA (3) (2)


    Original     		PDF -250mV -30mA

    Untitled

    Abstract: No abstract text available
    Text: QST4 Transistors Low frequency amplifier QST4 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver 2.8 2.9 (4) (5) (6) 0.85 0.16 zFeatures 1) A collector current is large. 2) VCE(sat) −250mV At IC=−1.5A / IB=−30mA (3) (2) 0.4


    Original     		PDF -250mV -30mA

    Untitled

    Abstract: No abstract text available
    Text: QST4 Transistors Low frequency amplifier QST4 zApplication Low frequency amplifier Driver zExternal dimensions Unit : mm 2.8 2.9 0.85 0.16 (3) (2) 0.4 zFeatures 1) A collector current is large. 2) VCE(sat) ≦ −250mV At IC=−1.5A / IB=−30mA (4) (5) (6)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US6T4 Transistors Low frequency amplifier US6T4 Power dissipation Junction temperature Range of storage temperature 1.7 0.77 0.2 1pin mark 0~0.1 0.17 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −6 −3 −6 400 1.0 150 −55 to +150 1.3 1


    Original     		PDF 85Max. 15Max. -250mV -30mA

    Untitled

    Abstract: No abstract text available
    Text: QST4 Transistors Low frequency amplifier QST4 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver 2.8 2.9 (4) (5) (6) 0.85 0.16 zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA (3) (2)


    Original     		PDF -250mV -30mA

    Untitled

    Abstract: No abstract text available
    Text: US6T4 Transistors Low frequency amplifier US6T4 zDimensions Unit : mm 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA ROHM : TUMT6 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C)


    Original     		PDF -250mV -30mA

    TORX1950

    Abstract: TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md TORX1951 TCD2565BFG TCD2916BFG TCD2712DG
    Text: SEMICONDUCTOR GENERAL CATALOG Optical Semiconductor Devices Visible LEDs Photosensors Photocouplers and Photorelays Fiber-Optic Devices TOSLINKTM Image Sensors 1 2010/9 SCE0004K Visible LEDs Dual-Color LED Lamps Part Number TLRMHGH48T(F) TLRMHGH48M(F)


    Original     		PDF 2010/9SCE0004K TLRMHGH48T TLRMHGH48M TORX1950 TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md TORX1951 TCD2565BFG TCD2916BFG TCD2712DG

    GFT43A

    Abstract: 2SA226 2SA92 OC602 AF102 2SA422 2SA518 2N3770 oc42 2SA419
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 2SA57 2SA175 2SA77 2SA76 2SA476 MD420 GFT43A 2SA226 2SA92 OC602 AF102 2SA422 2SA518 2N3770 oc42 2SA419

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS* RATINGS


    OCR Scan     		PDF NSP6191

    transistor t04

    Abstract: T04 transistor transistor marking t04 transistor 1022 t04 07 TRANSISTOR marking code t04 PMSS3904 Philips SOT323 t04 "transistor" SS3904 Marking transistor t04
    Text: Product specification Philips Semiconductors PMSS3904 NPN switching transistor FEATURES PINNING • Low current max. 100 mA DESCRIPTION PIN • Low voltage (max. 40 V). APPLICATIONS 1 base 2 emitter 3 collector • General purpose switching and amplification


    OCR Scan     		PDF PMSS3904 OT323 PMSS3906. PMSS3904 OT323) SS3904 transistor t04 T04 transistor transistor marking t04 transistor 1022 t04 07 TRANSISTOR marking code t04 PMSS3904 Philips SOT323 t04 "transistor" SS3904 Marking transistor t04

    BFW45

    Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
    Text: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39


    OCR Scan     		PDF BFR59 BFS89 BFS90 BFS91 BFT47 5000G BFT48 BFT49 BFW45 BFT57 BFT58

    transistor t04 76

    Abstract: GV 475 diode transistor T04 NDB6060 004027S
    Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060/NDB6060 025ft b50113G 0DMQ27H bS01130 004027S transistor t04 76 GV 475 diode transistor T04 NDB6060

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    2n3866 sos

    Abstract: 2n4041 2N4127 BFS98 2n3733 BFS96 BFS97 BSV33 ZT180 ZT181
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 25°C amb. mW VCE(sat) max. volts volts volts volts BFS96 BFS97 B FS98 -6 0 -6 0 -8 0 -3 0 -4 0 -6 0 -5 -5 -5 500 500 500


    OCR Scan     		PDF BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 2n3866 sos 2n4041 2N4127 2n3733 ZT180 ZT181

    FIL-3C

    Abstract: to-92 mosfet 13T13
    Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


    OCR Scan     		PDF T0257AB SM8F13* SM8F33* SM8F23* SM8F43* T0258AA FT0258AA HDS100 FIL-3C to-92 mosfet 13T13

    2N1103

    Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155