T1P31DF
Abstract: No abstract text available
Text: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed
|
OCR Scan
|
PDF
|
TIP31F;
TIP31BF;
T1P31DF
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP31F
bb53331
T1P31DF
|
Untitled
Abstract: No abstract text available
Text: TIP31D, TIP31E, TIP31F NPN SILICON POWER TRANSISTORS Copyright @ 1997, Power Innovations Limited, UK_ AUGUST 1978 • REVISED MARCH 1997 • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current
|
OCR Scan
|
PDF
|
TIP31D,
TIP31E,
TIP31F
O-220
TIP31D
TIP31E
TJP31E,
T1P31F
|
31AF
Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
Text: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed
|
OCR Scan
|
PDF
|
TIP31F;
TIP31BF;
T1P31DF
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP31F
bS3T31
31AF
31df
TIP32AF
T1P31
31DF 4 2B
T1P31C
TIP31 PNP Transistor
TIP31BF
TIP32BF
|