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    k20s

    Abstract: NPN planar RF transistor RZ3135B14W
    Text: 7= 3 3 -/'' Philips Components Data sheet status Prelim inary specification date of Issue Jun e 1992 PHILIPS RZ3135B14W NPN silicon planar epitaxial microwave power transistor INTERNAT IONAL FEATURES Sb E D 711Dö2tj • In te rd ig ita te d s tru c tu re ; high


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    PDF RZ3135B14W 711002b D04bSÃ 100fis T-33-1T 7110aSb k20s NPN planar RF transistor RZ3135B14W

    BDT41

    Abstract: BDT41A BDT41B BDT42 TIP41
    Text: SSE D N AMER PHILIPS /DI SCRETE • 11 1^53=531 0Qlei713 □ ■ BDT41;A BDT41B;C I T - 33 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The T IP41 series is an equivalent type. P-N-P complements are B D T 4 2 series.


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    PDF BDT41 BDT41B TIP41 BDT42 T0-220AB. 7Z82918 T-33-11 BDT41A