Untitled
Abstract: No abstract text available
Text: Application Note 1717 ISL6726EVAL2Z: 24V to 12V 90W Active Clamp Forward DC/DC Converter Introduction Design Specifications The board is a 24V input to 12V output DC/DC converter that can output current up to 7.5A. It is implemented with Intersil’s Active Clamp Forward ACF current-mode PWM controller,
|
Original
|
PDF
|
ISL6726EVAL2Z:
ISL6726.
ISL6726,
not717
AN1717
|
Untitled
Abstract: No abstract text available
Text: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC
|
Original
|
PDF
|
116-16NO1
116-16N
E72873
20101007a
|
VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC
|
Original
|
PDF
|
145-16NO1
E72873
20101007a
VUB145-16NOXT
|
CT7343
Abstract: R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A
Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features K K K K K K K K K K K K The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
|
Original
|
PDF
|
SC4910A/B
SC4910A/B
8208T
31414R
TPS2829
TPS2829DBVR"
TSSOP-20
SC4911
CT7343
R0805
sot23-123
10K ohms 0805 package
4910a
4431 mosfet
r51 c/4
P8208T
SC4910
SC4910A
|
P8208T
Abstract: PA0801 fzt853 MLPQ-12 SC1301A SC431 SC4431 SC4806 SC4806MLTRT sot23-5pin
Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains
|
Original
|
PDF
|
SC4806
SC4806
MLPQ-12,
P8208T
PA0801
fzt853
MLPQ-12
SC1301A
SC431
SC4431
SC4806MLTRT
sot23-5pin
|
R1206
Abstract: PA0801 P8208T gate pulse transformer pa0264 pa0810 fzt853 pe 68386 R20 marking 22N55 SC1301A
Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains
|
Original
|
PDF
|
SC4806
SC4806
R1206
PA0801
P8208T
gate pulse transformer pa0264
pa0810
fzt853
pe 68386
R20 marking
22N55
SC1301A
|
pa0810
Abstract: capacitor 2.2n 0805 1 fzt853 sot23_bec PA0801 C31 MARKING CODE SO8 do213AC P8208T MLPQ-12 SC431
Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains
|
Original
|
PDF
|
SC4806
SC4806
MLPQ-12,
pa0810
capacitor 2.2n 0805 1
fzt853
sot23_bec
PA0801
C31 MARKING CODE SO8
do213AC
P8208T
MLPQ-12
SC431
|
diode MARKING CODE A9
Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"
|
OCR Scan
|
PDF
|
160-i
f-1SS349--
SS181
SS184
SS187
SS190
1SS307
SS193
HN2D01P
HN1D01F
diode MARKING CODE A9
02CZ6
02CZ2
s32 schottky diode
SS322
46/SMC 5/L4F1 DIODE
List of Marking
|
lts 542
Abstract: 1N5B21 FDC37C662 SD14 SMC34C60 QIC-80 piezo driver 1N5B21-1-3
Text: SM C34C60 SMC PRELIMINARY STANDARD MICROSYSTEMS CORPORATION Parallel Port Interface Chip - Peripheral Side FEATURES Creates PC/AT-Style Bus from Parallel Printer Port Signals Single Chip Interface to Any Bus Capable Peripheral Supports Standard, Bi-Directional, EPP,
|
OCR Scan
|
PDF
|
SMC34C60
16-Bit
0D1122Ã
lts 542
1N5B21
FDC37C662
SD14
SMC34C60
QIC-80
piezo driver
1N5B21-1-3
|
1sr154-100
Abstract: SR154
Text: 1SR154-100/1SR154-200/1SR154-400 — K /D iodes 1SR15 4 -1 0 0 /1 SR154-200 1SR154-400 ->' a > # * » & » » * if-f * - K Silicon Diffused Junction Rectifying Diodes • irffi \ns[2]/Dimensions Unit : mm) • (P S M )» 2) • Features 1) Sm all surface mount type (PSM ).
|
OCR Scan
|
PDF
|
1SR154-100/1SR154-200/1SR154-400
1SR15
SR154-200
1SR154-400
1SR154-100
1SR154-200
1SR154-400
SR154
|
RX-2C G
Abstract: marking code rie sot23 em 2860 k2915 MARKING JW SOT-23
Text: What H E W LET T 1"KM PA C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series F eatures • S urface M ount SOT-23/ SOT-143 P ackage • High D e te c tio n S en sitivity: Description HSMS-2860 Package Lead Code
|
OCR Scan
|
PDF
|
HSMS-2850
HSMS-2860
OT-23/
OT-143
OT-23
5966-0928E,
RX-2C G
marking code rie sot23
em 2860
k2915
MARKING JW SOT-23
|
1s1555 diode
Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Text: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:
|
OCR Scan
|
PDF
|
1S1553-1S1555
1S1553
1S1554
1S1555
100mA
1s1555 diode
silicon diode 151555
silicon diode 1S1555
1s1554 diode
1S1553/1S1555
|
SHINDENGEN DIODE
Abstract: No abstract text available
Text: y a I" — y K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS S2S6M 60V 2A « • T Ì1 5 0 T ; •PnnsM 7 i 7 > i / i S S ! • 1 O 0 U -K ffl j * •S R S S •D c /D c n y i { — 9 •*S . f — Lx, O A » S •a«. RATINGS Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
|
SOT23 6pin MARKING 3F
Abstract: marking 3f 6pin MBR7535 MBR7545
Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
|
OCR Scan
|
PDF
|
MBR7535
MBR7545
DO-35
SOT23 6pin MARKING 3F
marking 3f 6pin
MBR7545
|
|
|
MARKING 330D
Abstract: BD330DW 330D marking iP sot363
Text: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies
|
OCR Scan
|
PDF
|
MBD110DWT1/D
OT-363
MBD110DW
BD330DW
MBD770DW
419B-01,
OT-363
X43042F-0
MBD110DWT1
MARKING 330D
330D
marking iP sot363
|
bgy 53
Abstract: No abstract text available
Text: SMCJ5.0 thru SMCJ170CA 1500 Watt Surface Mount TVS TEL: 805-498-2111 DESCRIPTION FEATURES: The SMCJ series of transient voltage suppressors are designed to protect components from transient voltages caused by lightning, electrostatic discharge ESD , electrical fast transients (EFT), inductive load
|
OCR Scan
|
PDF
|
SMCJ170CA
MOS-214AB
DD0422Ã
bgy 53
|
mmsz5v1t1
Abstract: marking T1 zener u5 MMSZ4702T1
Text: SOD-123 DEVICES continued Zener Diodes (continued) Cathode = Notch (Vp = 0.9 V Max. @ lF = 10 mA for all types) continued ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted«24», (VF = 0.9 V Max. @ lF = 10 mA for all types) Max Reverse Leakage
|
OCR Scan
|
PDF
|
OD-123
MMSZ4693T1
MMSZ4694T1
MMSZ4695T1
MMSZ4696T1
MMSZ4697T1
MMSZ4698T1
MMSZ4699T1
MMSZ4700T1
MMSZ4701T1
mmsz5v1t1
marking T1
zener u5
MMSZ4702T1
|
DIODE smd marking uh
Abstract: SMD MARKING XL Diode marking m7 smd m7 smd xl MARKING SMD xl 501Z
Text: Schottky Barrier Diode Twin Diode m tm m o u tlin e Package : E-pack DE5SC4M Unit I mm Weight 0.326k T yp 40V 5A Feature • SM D • SMD • PRRSMÿ7/ 'C 5 > î/ x < S lI • P brsm Rating 1 High lo Rating-Small-PKG i . V . f'.t f t iJ T yp«* N I ol 5S C4
|
OCR Scan
|
PDF
|
03Z6g
51k-0-
J532-1)
DIODE smd marking uh
SMD MARKING XL
Diode marking m7
smd m7
smd xl
MARKING SMD xl
501Z
|
ixys ml 075
Abstract: 50N60A
Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES
|
OCR Scan
|
PDF
|
IXGX50N60AU1
IXGX50N60AU1S
50N60AU1
ixys ml 075
50N60A
|
1SS133
Abstract: No abstract text available
Text: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o
|
OCR Scan
|
PDF
|
1SS130/1SS131
/1SS132
/1SS133/1SS134
1SS130/1SS131/1SS132
1SS133/
1SS134
1SS133
1SS132
1SS131
1SS133
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 1 M M Ü (^ L6213 SOLENOID DRIVER + SWITCH MODE POWER SUPPLY ADVANCE DATA . • ■ ■ . O PERATING SUPPLY VOLTAGE UP TO 46V 1A POWER SUPPLY (5V 5A SO LENOID DRIVER PRECISE ON CHIP REFERENCE VOLTAGE DISCONTINUO US MODE - FREQUENCY VARIABLE
|
OCR Scan
|
PDF
|
L6213
L6213
|
Untitled
Abstract: No abstract text available
Text: TP802C0400A -4 K SCHOTTKY BARRIER DIODE Features • te V F Low VF Super high speed sw itch in g . • w a f t «14 Connection Diagram High reliability by planer design ' Applications High speed p ow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings
|
OCR Scan
|
PDF
|
TP802C0400A)
500ns
E3TS30S3^
95t/R89
|
LIF 10R
Abstract: No abstract text available
Text: SIL31 R ( 2 5 o a ) • : Outline Drawings Units mm GEIMERAL-USE RECTIFIER DIODE I Features High reverse voltage capability • Stud mounted Z.M : Applications • ',<‘y r ‘lJ “ ? E ® S Battery chargers • 7 7 -> u x m m m Brush-less generators
|
OCR Scan
|
PDF
|
SIL31
SIL31
50HzIEfè
ftftl80"
50HzI
95t/R
Shl50
LIF 10R
|
Untitled
Abstract: No abstract text available
Text: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K /D iod es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 v V =i > 1 $ 3- V T ; u7 °U - j- M M & JS* < "J 3- > ? 2 '< * - KT7 K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays
|
OCR Scan
|
PDF
|
DAN401
/DAN601
/DAN801
/DAN803/DAN403
DAP401
/DAP601
/DAP801
/DAP803
|
