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    T40N10E Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl PDF

    T40N10

    Abstract: No abstract text available
    Text: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		MTB40N10E MTB40N10E/D T40N10 PDF

    t40n10e

    Abstract: T40N10 2305 SOT-23 MTB40N10ET4 AN569 MTB40N10E sot-223 body marking A G
    Text: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		MTB40N10E r14525 MTB40N10E/D t40n10e T40N10 2305 SOT-23 MTB40N10ET4 AN569 MTB40N10E sot-223 body marking A G PDF