b 772 p
Abstract: CMP265 CMP460 BFG410W CMP230 CMP231 CMP287 CMP452 CMP453 CMP485
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0789 : T. Buss th : 30 of September 97 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W update of report RNR-T45-96-B-772
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RNR-T45-97-B-0789
BFG410W
RNR-T45-96-B-772
BFG410W
CMP250
CMP469
CMP180
CMP426
s10mil
b 772 p
CMP265
CMP460
CMP230
CMP231
CMP287
CMP452
CMP453
CMP485
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BFG425W
Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:
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RNR-T45-97-B-0688
900MHz
BFG425W
BFG425W
900MHz.
900MHz,
900mhz driver
amplifier 900mhz
DRIVER DESIGN
philips c3
RF 900MHz
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L05 SMD
Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W
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RNR-T45-96-B-1025
900MHz
BFG425W
RNR-T45-96-B-771
BFG425W
900MHz,
900MHz:
CMP257
CMP383
L05 SMD
CMP266
RNR-T45-96-B-1025
L6 PHILIPS
transistor smd Sb1
CMP401
BFG400W
CMP409
CMP231
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BFG425
Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly
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RNR-T45-96-B-773
14-Nov-1996
BFG425W
BFG425W
BFG400W
100KHz
BFG425
BFG410W
TRANSISTOR noise figure measurements
2 GHz LNA
RNR-T45-96-B-773
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BFG403W
Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly
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RNR-T45-97-B-006
900MHz
BFG403W
BFG403W
900MHz,
900MHz:
0805CS
0805CS Series
amplifier 900mhz
900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
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B 0920
Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The
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RNR-T45-97-B-0920
400MHz
BFG540W/X
BFG540W/X
400MHz,
400MHz:
400MHz
B 0920
Philips X7R
Philips npo 0805
SOT343 C5
RNR-T45-97-B-0920
0805CS
transistor model list
B0920
TRANSISTOR noise figure measurements
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L05 SMD
Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly
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RNR-T45-96-B-770
20-Jan-00
900MHz
BFG410W
BFG410W
900MHz.
900MHz
CMP180
CMP210
L05 SMD
w05 smd transistor
SMD W05
W05 transistor
W05 SMD
L6 PHILIPS
CMP401
CMP281
CMP263
CMP286
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Philips npo 0805
Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly
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RNR-T45-97-B-0584
BFG425W
BFG425W
CMP266
s10mi
CMP403
CMP351
CMP250
CMP270
Philips npo 0805
5Ghz lna transistor datasheet
0805CS Series
BFG425W APPLICATION
philips satellite systems
w2 smd transistor
0805CS
CMP230
CMP231
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2n2222+spice+model
Abstract: No abstract text available
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The
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RNR-T45-97-B-0920
400MHz
BFG540W/X
BFG540W/X
400MHz,
400MHz:
400MHz
2n2222+spice+model
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transistor bipolar driver schematic
Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.
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RNR-T45-97-B-0787
BFG425W
BFG425W
15dBm
BFG400W
-30dBm,
BFG425W,
transistor bipolar driver schematic
RNR-T45-97-B-0787
2Ghz amplifier
BFG425
BFG425W APPLICATION
b0787
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BFG425W
Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.
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RNR-T45-97-B-0686
Aug1997
900MHz
BFG425W
BFG425W
900MHz.
900MHz,
do30dBm,
-30dBm,
BFG425W APPLICATION
RNR-T45-97-B-0686
transistor bipolar driver schematic
Z048
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Untitled
Abstract: No abstract text available
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,
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RNR-T45-97-B-375
BFG410W
BFG410W
-31dB,
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Axial Leaded – 1kA > AK1 series RoHS AK1 Series Description The AK1 series of high current transient suppressors have been specially designed for use in A.C. line protection and any demanding applications AC or DC . Any voltage
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E128662
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Axial Leaded – 1kA > AK1 series RoHS AK1 Series Description The AK1 series of high current transient suppressors have been specially designed for use in A.C. line protection and any demanding applications AC or DC . Any voltage
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E128662
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|
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Axial Leaded – 10kA > AK10 series RoHS AK10 Series Description have been specially designed for use in A.C. line protection and any demanding applications AC or DC .
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AK10-xxxx
com/series/ak10
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Axial Leaded – 6kA > AK6 series AK6 Series RoHS Description The AK6 series of high current transient suppressors have been specially designed for use in A.C. line protection and any demanding applications AC or DC .They offer superior
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BF908 Application Note
Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Text: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS
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RNR-T45-97-F-805
12Vtypes
BF998,
BF908
BF1100,
OT143)
BF998R,
BF908R
BF1100R,
OT143R)
BF908 Application Note
BF998
bf1109
dual-gate
philips rf mosfets
RGG20
mosfets fl philips
TRANSISTOR mosfet 9V
BF909R
JBT SWITCH
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AEG T 25 N 1100
Abstract: AEG T45F aeg diode AEG T 25 N 1000 aeg td AEG t 45 n 1100
Text: 0029426 A E G T45 P AEG 81C 05811 CORP CORP " T yp enreihe/Typ e range_ T 4 5 F _ 2 0 0 * 400 Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um perm issible values U drmi U rrm Periodische Vorwärts-und
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A115A
Abstract: A115M A115 A115F diode A115m A115B A115C A115D A115 Series A115-A
Text: HA RR IS S E M I t O N D S E CT OR bflE D • 43 G22 71 0 0 5 0 31 7 T45 H I H A S A115 Series 33 h ae e sî 3A, 50V - 600V Diodes December 1993 Package Features • Glass Passivated Junction AL-3 TOP VIEW • Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability
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OCR Scan
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PDF
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43G2271
G050317
A115A,
A115B,
A115C,
A115D,
A115E,
A115F,
A115M
250ns
A115A
A115
A115F
diode A115m
A115B
A115C
A115D
A115 Series
A115-A
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ci 740
Abstract: 1C45 DH744
Text: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Low Voltage SOT-23 Temperature Sensors ADT45/ADÏ50 FEATURES Low Voltage O peration 2.7 V to 12 V Calibrated D irectly in °C 10 m V/°C Scale Factor ±2°C Accuracy Over Tem perature (typ) ±0.5°C Linearity (typ) Stable w ith Large Capacitive Loads
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OCR Scan
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PDF
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OT-23
ADT45/AD
ADT45
ADT50
OT-23
OT-23)
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20823
Abstract: No abstract text available
Text: Zener Diodes 2.0 Watt Zener Diodes/DO-41 Type Number ZY1 ZY3.9 ZY4.3 Zener Voltage Range* Test Current Maximum Zener Impedance Typical Temperature Coefficient Maximum Zener Current At Izj Vr IzM %/°C Volts mA VZ @ IzT Volts mA 0.71-0.82 3.7-4.1 4.0-4.6 100
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Diodes/DO-41
ZY100
ZY110
ZY120
ZY130
ZY150
ZY160
ZY180
ZY200
DQ0D43T
20823
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Untitled
Abstract: No abstract text available
Text: 1N4370 thru 1N4372 INTERNATIONAL SEMICONDUCTOR, INC. 1N746 thru 1N759 400 MILLIW ATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES MAXIMUM RATINGS O p e ra tin g T e m pe ratu re: -65 °C to +175 °C -65 °C to +175 °C 400 mW at 75 °C 4.0 m W /'C above 75 °C
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1N4370
1N4372
1N746
1N759
T00037Ã
1N4370
1N4372A
1N746
1N759A
1N935
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ECG245
Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
Text: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter
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ECG229
ECG232
ECG233
ECG234
ECG23S
O-218)
ECG257
O-127
ECG258
ECG257)
ECG245
DIODE T28
TO127
ECG250
# Frequency at which common emitter current gain is 70.0 of low frequency gain
darlington 40 A
ECG238
ECG191
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