T63N Search Results

Contextual Info: FREQUENCY II < oTa I TAVM TYPE 6 0 A rais T63N T63N T63N T63N T63N T63N T63N T63N T63N 180 T80N T80N T80N T80N T80N T80N T80N T80N T80N T j M= 1 2 5 °C 400 600 800 1000 1100 1200 1400 1600 1800 Arn s < _LA _ 63 400 600 800 1000 1100 1200 1400 1600 1800

3318A

Contextual Info: JUNE 28, 1991 TEST &EPORT #91065 QUALIFICATION TESTING IDC CONNECTOR SYSTEM HCMD SERIES HCSD SERIES SAMTEC COtiORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. 1 Contech Research I i !. t i t This is to certify that the evaluation described herein was

T63N

Abstract: philips dl 711
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E Q tE D PHS1401 SERIES fc>b53T31 Q D l l b T S E • t - 03-n ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process