Contextual Info: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,

C4001

Abstract: S13-146
Contextual Info: 1 MEGABIT 1024KX 1-BIT CMOS STATIC RAM SIP MODULE PRELIMINARY IDT 7MC4001 FEATURES: DESCRIPTION: • H ig h -de n slty 1 m e g a b it (1024K x 1) C M O S sta tic RAM m odule • Surface m o un ted LCC c o m p o n e n ts m o un ted o n a co-fired c e ra m ic substrate

Contextual Info: L7C197 2 5 6K x 1 Static RA M □ 256K x 1 Static R A M w ith Separate I / O , C h ip Select Pow erdow n □ A uto-P ow erd ow n D esign □ A dvanced C M O S T echnology □ H igh Sp eed — to 15 ns m axim um □ Low P ow er O peration A ctive: 165 m W typical at 35 ns

idt71257

Contextual Info: y CMOS STATIC RAM 256K 256K x 1-BIT Integrated Device TechnokDgy. Inc PRELIMINARY IDT 71257S IDT 71257L FEA TU R ES: DESCRIPTION: • H ig h -sp e e d (equal a c c e s s a n d c y c le time) T h e T71257 is a 262,144-blt h ig h -s p e e d sta tic R A M org an ize d

IDT71257

Contextual Info: Jdf CMOS STATIC RAM 256K 256K x 1-BIT) Integrated DeviceTechnology Inc PRELIMINARY IDT 71257S IDT 71257L FEATURES: DESCRIPTION: • T h e T71257 Is a 262,14 4-b lt h ig h -s p e e d sta tic RAM organized as 256K x 1. It Is fa b ric a te d u sin g ID T 's hig h -p erform a n ce, hlgh-rella b lllty C E M O S te c h n o lo g y . T h is state-of-the-art te chnology,