Untitled
Abstract: No abstract text available
Text: AFE032 www.ti.com SBOS669 – AUGUST 2013 Power-Line Communications Analog Front-End Check for Samples: AFE032 • Supports: – CENELEC Bands A, B, C, D – ARIB STD-T84, FCC – FSK, SFSK, and NB-OFDM • Conforms To: – EN50065-1/2/3/7 – FCC, Part 15
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AFE032
SBOS669
AFE032
QFN-48)
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NE85633
Abstract: NE02133 NE68033 Marking R32 marking R33 NE68533 NE97833 NE68133 R24 marking NE94433
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 33 +0.2 2.8 -0.3 2.9 ± 0.2 0.95 2 1.9 3 +0.10 0.4 -0.05 ALL LEADS 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 MARKING 1.1 to 1.4 0.8 0 to 0.1
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NE02133
NE68033
NE68133
NE68533
NE68633
NE68733
NE68833
NE85633
NE94433
NE97733
NE85633
NE02133
NE68033
Marking R32
marking R33
NE68533
NE97833
NE68133
R24 marking
NE94433
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R47 marking
Abstract: U73-U74 NE25118 NE85618 1817 transistor NE34018 NE68018 NE68118 R27 marking NE68618
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 18 2.1 ± 0.2 +0.10 0.3 -0.05 LEADS 2, 3, 4 1.25 ± 0.1 2.0 ± 0.2 3 2 0.65 1.3 0.60 1 4 +0.10 0.4 -0.05 MARKING 0.15 0.9 ± 0.1 0 to 0.1
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NE25118
NE68618
NE68718
NE68018
NE68118
NE68518
NE68818
NE34018
NE76118
NE85618
R47 marking
U73-U74
NE25118
NE85618
1817 transistor
NE34018
NE68018
NE68118
R27 marking
NE68618
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UPA801T
Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T
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UPA800T
UPA809T
UPA801T
UPA810T
UPA802T
UPA811T
UPA806T
UPA812T
UPA807T
UPA814T
UPA801T
UPA800T
UPA802T
upa801
UPA814T
UPA806T
UPA807T
UPA808T
UPA809T
UPA810T
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NE85630
Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130
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NE02130B
NE02130
NE68030
NE68130
NE68530
NE68630
NE68730
NE68830
NE85630
NE94430
NE85630
T62 marking
marking R33
NE02130B
NE02130
NE94430
NE68030
NE68130
NE68530
NE68630
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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QNEE9801
Abstract: stmicroelectronics traceability
Text: QNEE9801 QUALITY NOTE High Reliability Certified Flow HRCF The High Reliability Certified Flow has been developed by STMicroelectronics for sensitive applications, such as security automotive and medical applications, that need a very high level of reliability (with the
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QNEE9801
QNEE9801
stmicroelectronics traceability
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C1A MARKING
Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10
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NE02139
NE68039
NE68139
NE68539
NE68639
NE68739
NE68839
NE85639
UPC1675G
UPC1676G
C1A MARKING
c1a c1b c1c
marking C1C
NE68139
NE02139
NE68839
MARKING r4
ne85639
R47 marking
NE68039
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2SC5180
Abstract: 2SC5180-T1 t84 marking PU10517EJ01V0DS
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low current consumption and high gain 2 S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
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2SC5180
S21e2
2SC5180-T1
2SC5180
2SC5180-T1
t84 marking
PU10517EJ01V0DS
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8MB SDRAM
Abstract: PC133 registered reference design
Text: 8 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT864 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM • JEDEC-standard, PC100, rev 1.0, 144-pin, smalloutline, dual in-line memory module (SODIMM)
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PC100,
144-pin,
096-cycle
MT4LSDT864
MT8VR12818AG
512MB
MT16VR25616AG
MT16VR25618AG
MT16VR25618AG-840A1
8MB SDRAM
PC133 registered reference design
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PC133 registered reference design
Abstract: MT16LSDF3264HG-133
Text: 32 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT16LSDF3264HG For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 144-Pin Small-Outline DIMM • JEDEC-standard, PC100 and PC133, 144-pin,
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PC100
PC133,
144-pin,
256MB
096-cycle
MT16LSDF3264HG
MT8VR12818AG
512MB
MT16VR25616AG
PC133 registered reference design
MT16LSDF3264HG-133
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MT8LSDT1664HG-10EB1
Abstract: PC133 registered reference design
Text: 16 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT8LSDT1664 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard, PC66 and PC100, rev 1.0, 144pin, small-outline, dual in-line memory module
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PC100,
144pin,
128MB
096-cycle
MT8LSDT1664
MT8VR12818AG
512MB
MT16VR25616AG
MT16VR25618AG
MT8LSDT1664HG-10EB1
PC133 registered reference design
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transistor on 4409
Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180
Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units : mm S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
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2SC5180
2SC5180
transistor on 4409
transistor 3504 nec
marking 1147 IC 6 pin
nec 3504 ic
transistor zo 607
zo 607 MA
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MT16LD464AG
Abstract: No abstract text available
Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant
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PC66-,
PC100-
PC133-compliant
168-pin,
128MB
096-cycle
-750A1
-745A1
-850A1
-845A1
MT16LD464AG
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Untitled
Abstract: No abstract text available
Text: 4, 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT4LSDT464A, MT4LSDT864A MT4LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant
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PC66-*
PC100-
PC133-compliant
168-pin,
128MB
096-cycle
-750A1
-745A1
-850A1
-845A1
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PC133 registered reference design
Abstract: No abstract text available
Text: ADVANCE 8, 16 MEG x 72 REGISTERED SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSDT872, MT9LSDT1672 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM
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168-pin,
PC133-
PC100-compliant
128MB
MT8VR12818AG
512MB
MT16VR25616AG
MT16VR25618AG
MT16VR25618AG-840A1
PC133 registered reference design
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nec 2651
Abstract: hfe 4049 2454 transistor 2SC5177 2SC5177-T1 2SC5177-T2 285-2 MAG IC t84 marking of IC 4047 8 pin ic 3773
Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
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2SC5177
2SC5177-T2
nec 2651
hfe 4049
2454 transistor
2SC5177
2SC5177-T1
2SC5177-T2
285-2 MAG IC
t84 marking
of IC 4047
8 pin ic 3773
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ic nec 2701
Abstract: ic sc 4145 2SC5178 2SC5178-T1 2SC5178-T2 ic 7441 t84 marking PT 4207
Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units: mm |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
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2SC5178
2SC5178-T2
2SC51cial:
ic nec 2701
ic sc 4145
2SC5178
2SC5178-T1
2SC5178-T2
ic 7441
t84 marking
PT 4207
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D8560
Abstract: D-85609
Text: 4, 8, 16 MEG x 64 SDRAM SODIMMs SMALL-OUTLINE SDRAM MODULE MT4LSDT464 L H, MT8LSDT864(L)H, MT8LSDT1664(L)H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard 144-pin, small-outline, dual inline memory module (SODIMM)
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144-pin,
128MB
096-cycle
-750A1
-745A1
-850A1
-845A1
-840A1
D8560
D-85609
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5180
Abstract: 2SC5180-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5179
Abstract: 2SC5179-T1 2SC5179-T2 transistor with marking S 0922
Text: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
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2SC5179
2SC5179
2SC5179-T1
2SC5179-T2
transistor with marking S 0922
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0118-B
Abstract: simm 64MB
Text: ADVANCE 8, 16 MEG x 64 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT864A, MT16VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • 184-pin dual in-line memory modules DIMM • Utilizes 100 MHz and 133 MHz DDR SDRAM
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184-pin
128MB
MT8VR12818AG
512MB
MT16VR25616AG
MT16VR25618AG
MT16VR25618AG-840A1
0118-B
simm 64MB
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16, 32 MEG x 72 DDR REGISTERED SDRAM DIMMs MT18VDDT1672G, MT18VDDT3272G DDR SDRAM DIMM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT • 184-pin, dual in-line memory modules DIMM
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184-pin,
128MB
256MB
-750A1
-745A1
-850A1
-845A1
-840A1
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