Untitled
Abstract: No abstract text available
Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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T8914VA
T8914VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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21633 d
Abstract: T8914VA FVOV6870 MIL-HDBK-263
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
2002/95/EC
2002/96/EC
T8914VA
18-Jul-08
21633 d
FVOV6870
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
2002/95/EC
2002/96/EC
T8914VA
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
2002/95/EC
2002/96/EC
T8914VA
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
2002/95/EC
2002/96/EC
T8914VA
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
2002/95/EC
2002/96/EC
T8914VA
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
|
PDF
|
T8914VA
T8914VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
2002/95/EC
2002/96/EC
T8914VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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Original
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PDF
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T8914VA
T8914VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare
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VMN-SG2200-1502
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