TA4011 Search Results

S211 equivalent

Abstract: AFL1 S211
Contextual Info: T O SH IB A TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A fl 1 1 F m m m • ■ ■ ■ UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current Içç = 3.5mA • Wide Band f = 2.4GHz 3dB down • VCC = 1-5~3V Operating Supply Voltage

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features z Low current: ICC = 3.5 mA z Wide band: f = 2.4 GHz 3dB down z Operatin supply voltage: VCC = 1.5 to 3 V Pin Assignment Weight: 0.006 g (typ.)

Reliability

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features z Low current: ICC = 3.5 mA z Wide band: f = 2.4 GHz 3dB down z Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Weight: 0.006 g (typ.)

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 3 V Weight: 0.003 g (typ.)

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features Low current: ICC = 3.5 mA Wide band: f = 2.4 GHz 3dB down Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Maximum Ratings (Ta = 25°C)

TA4011FU

Contextual Info: TOSHIBA TA4011FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 011 FU UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : IQQ = 3.5 mA : f = 2.4 GHz 3 dB down • Wide Band • Operating Supply Voltage : V qq = 1 .5 ~ 3 V

Contextual Info: TOSHIBA TA4011FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 0 1 1 FU UHF W ID E BAND AMPLIFIER APPLICATIONS FEATURES • Low Current ICC = 3.5 mA • W ide Band f = 2.4 GHz 3 dB down • Operating Supply Voltage V CC = 1 .5 - 3 V

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5~3 V Weight: 0.003 g (typ.)

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5~3 V Weight: 0.003 g (typ.)

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5~3 V Weight: 0.003 g (typ.)

TA4011FU

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features l Low current: ICC = 3.5 mA l Wide band: f = 2.4 GHz 3dB down l Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Maximum Ratings (Ta = 25°C)

Contextual Info: T O SH IB A TA4011 FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A Af l 1 1 F U m m m • UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current Iç ç = 3.5mA • Wide Band f = 2.4GHz 3dB down • Operating Supply Voltage V CC = 1-5—3V

TA4011AFE

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5~3 V Maximum Ratings (Ta = 25°C)

TA4011F

Contextual Info: TOSHIBA TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4011F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 3.5 mA • Wide Band : f = 2.4 GHz (3dB down • Operating Supply Voltage : V q q = 1 .5 ~ 3 V MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TA4011F TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 01 1 F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current Içç = 3.5mA • Wide Band f = 2.4GHz 3dB down • V C c = 1-5~3V Operating Supply Voltage W eight : 0.014g (Typ.)

TA4011F

Contextual Info: TOSHIBA TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4011F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : Ice = 3.5mA • Wide Band : f = 2.4GHz 3dB down • Operating Supply Voltage : V çç = 1.5~3V MAXIMUM RATINGS (Ta = 25“C)

TA4011FU

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features Low current: ICC = 3.5 mA Wide band: f = 2.4 GHz 3dB down Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Maximum Ratings (Ta = 25°C)

TA4011F

Contextual Info: TO SH IBA TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4011F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 3.5 mA • Wide Band : f = 2.4 GHz (3dB down • Operating Supply Voltage : V q q = 1 .5 ~ 3 V MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features z Low current: ICC = 3.5 mA z Wide band: f = 2.4 GHz 3dB down z Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Absolute Maximum Ratings (Ta = 25°C)

TA4011F

Contextual Info: TA4011F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011F UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA · Wide band: f = 2.4 GHz 3dB down · Operating supply voltage: VCC = 1.5~3 V Weight: 0.014 g (typ.) Maximum Ratings (Ta = 25°C)

TA4011AFE

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA · Wide band: f = 2.4 GHz 3dB down · Operating supply voltage: VCC = 1.5~3 V Weight: 0.003 g (typ.)

721f

Abstract: ci 7445 TLP421 TLP 7445 TLP521 TLP521 SOP tlp421-4 TA4011FU TA4016AFE TLP621
Contextual Info: 東芝半導体情報誌アイ 2000 1･2月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 eye 2000年1･2 u c to r 月号 d n co i Vo m l.9 Se 1 CONTENTS INFORMATION

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11EWA HIGH EFFICIENCY RED Features Description !4.0 INCH MATRIX HEIGHT. The High Efficiency Red source color devices are ! DOT made with Gallium Arsenide Phosphide on Gallium SIZE 10mm. !LOW CURRENT OPERATION.

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11YWA YELLOW Features Description !4.0 INCH MATRIX HEIGHT. The Yellow source color devices are made with Gallium ! DOT Arsenide Phosphide on Gallium Phosphide Yellow Light SIZE 10mm. !LOW CURRENT OPERATION. Emitting Diode.