TA4013F

Contextual Info: TOSHIBA TA4013F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4013 F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power : PoldB = 3dBmW • Wide Band : f= 1.7G H z 3dB down • Operating Supply Voltage : V ( x = 1.5~3V _ SSOP5-P-0.95

TA4013FU

Contextual Info: TO SHIBA TA4013FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4 013 FU UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • : PoldB = 3dBmW High Power : f=1.7GHz 3dB down • Wide Band • Operating Supply Voltage : V çç = 1.5~3V W eight : 0.006g (Typ.)

Contextual Info: T O SH IB A TA4013FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 013 F U UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power PoldB = 3dBmW • Wide Band f= 1 .7 G H z 3dB down • Operating Supply Voltage V CC = 1-5~3V W eight : 0.006g (Typ.)

4013F

Contextual Info: T O SH IB A TA4013F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 4013F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power : PoldB = 3dBmW • Wide Band : f=1.7GHz 3dB down • Operating Supply Voltage : V q q = 1.5-3V _ SSOP5-P-0.95

TA4013FU

Contextual Info: TOSHIBA TA4013FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 013 F U UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power : Po1 dB = 3 dBmW : f = 1.7 GHz 3 dB down • Wide Band • Operating Supply Voltage : V qq = 1 .5 ~ 3 V

Contextual Info: T O SH IB A TA4013F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4013 F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power : PoldB = 3dBmW • Wide Band : f= 1 .7 G H z 3dB down • Operating Supply Voltage : V c c = 1.5~3V _ SSOP5-P-0.95

Contextual Info: T O SH IB A TA4013FU TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 4013FU UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power PoldB = 3dBmW • Wide Band f= 1 .7 G H z 3dB down • Operating Supply Voltage V CC = 1-5—3V W eight : 0.006g (Typ.)

Contextual Info: TOSHIBA TA4013FU TO SH IB A B IPO LA R LIN EA R IN TEG R A TED CIR CU IT SILICO N M O N O LITH IC TA4013FU UHF WIDE BAND AMPLIFIER APPLICATIONS FEA TU R ES • H igh Pow er Po1 dB = 3 dBm W • W id e Band f = 1.7 G H z 3 dB d ow n • O p e ra tin g Su pp ly V o lta ge

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or